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arXiv · 1403.7648

Two components for one resistivity in LaVO3/SrTiO3 heterostructures

Helene Rotella·Olivier Copie·Alain Pautrat·Philippe Boullay·Adrian David·Christophe Labbe·Cedric Frilay·Denis Pelloquin·Wilfrid Prellier
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Abstract

A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic mobility and a non-linear Hall effect at low temperature. In addition, a cross-over from a semiconducting state at high-temperature to a metallic state at low-temperature is observed, with a clear enhancement of the metallic character as the growth temperature increases. Optical absorption measurements combined with the two-bands analysis of the Hall effect show that the metallicity is induced by the diffusion of oxygen vacancies in the SrTiO3 substrate. These results allow to understand that the film/substrate heterostructure behaves as an original semiconducting-metallic parallel resistor, and electronic transport properties are consistently explained.

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Helene Rotella, Olivier Copie, Alain Pautrat, Philippe Boullay, Adrian David, Christophe Labbe, Cedric Frilay, Denis Pelloquin, Wilfrid Prellier. 2014-03-29. Two components for one resistivity in LaVO3/SrTiO3 heterostructures. https://doi.org/10.1088/0953-8984%2F27%2F9%2F095603

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