arXiv subjects

Denis Pelloquin

Publications and source records attributed to Denis Pelloquin.

7 recordsLinked to original sources

arXiv2026

Ultra-Soft Ferrimagnetism in a High-Entropy Spinel Oxide Driven by Site-Selective Cation Disorder

High-entropy materials are complex, multifunctional materials that have reshaped the design of advanced functional materials. Their chemically diverse compositions enable access to a broader compositional space than conventional solid solutions, while simultaneously posing significant challenges for fundamental structure property understanding. In this study, we introduce a new highentropy spinel oxide with an exceptionally low coercivity of 1.8 Oe at room temperature, among the lowest reported for bulk spinel oxides, and a high electrical resistivity (1560 ohm-cm). Neutron powder diffraction (NPD) and magnetic measurements reveal long-range collinear ferrimagnetic ordering (k = 0,0,0) with a transition temperature at 420 K. This rare combination of ultra-soft magnetic behavior, robust ferrimagnetic ordering well above room temperature, and high resistivity highlights its strong potential as an advanced soft-magnetic oxide for low-loss, high-frequency applications. Furthermore, X-ray absorption spectroscopy (XAS), Mossbauer spectroscopy, and NPD analyses were combined to determine the cation distribution and site selectivity across the tetrahedral and octahedral sites of the complex structure.

cond-mat.mtrl-sci↗

arXiv2026

A metallic CrS$_2$ phase bridging the gap between two- and three-dimensional dichalcogenides

We report on the high-pressure synthesis of a CrS$_2$ phase in the form of single-crystalline nanorods. A structural refinement of Precession Electron Diffraction Tomography data confirms the nominal CrS$_2$ composition and unveils a ladder-type structure formed by portions of 1T-type CrS$_2$ layers characteristic of two-dimensional (2D) dichalcogenides connected by chains of edge-sharing CrS$_6$ octahedra characteristic of 3D dichalcogenides with marcasite structure. Ab initio density functional theory calculations of the relaxed structure confirm the stability of this structure and indicate a strong overlap of the 3d states of Cr with the 3p states of S, thus suggesting strong covalent Cr-S bonds and metallic behavior. Electrical resistivity, $\varrho$, measurements on single nanorods confirm this behavior and yield $\varrho \sim 2-20$ m$\Omega$ cm at 4 K. The proposed ladder-like structure of CrS$_2$ forms open channels along the chain direction, which may be suitable for ionic conduction.

cond-mat.mtrl-sci↗

arXiv2024

Multiband transport in RuO$_2$

We present electrical and thermal transport measurements in single crystals of the metallic oxide RuO$_2$. The resistivity and Seebeck coefficient measured up to 970K confirm the metallic nature of transport. Magnetoresistance and Hall effect measurements as a function of orientation can be most easily described by a multiband transport model. We find that the ordinary Hall effect dominates any anomalous Hall signal in single crystals.

cond-mat.mtrl-sci↗

arXiv2020

Exotic compositional ordering in Mn-Ni-As intermetallics

Recent advances in tools for crystal structure analysis enabled us to describe a new phenomenon in structural chemistry, which, to this day, has remained hidden. Here we describe a crystal structure with an incommensurate compositional modulation, Mn0.6Ni0.4As. The sample adopts the NiAs type structure, but in contrast to a normal solid solution, we observe that manganese and nickel separate into layers of MnAs and NiAs with thickness of 2-4 face-shared octahedra. Experimentally, results are obtained by combination of 3D electron diffraction, scanning transmission electron microscopy and neutron diffraction. The distribution of octahedral units between the manganese and nickel layers is perfectly described by a modulation vector q = 0.360(3) c*. An additional periodicity is thus present in the compound. Positional modulation is observed of all elements as a consequence of the occupational modulation.

cond-mat.mtrl-sci↗

arXiv2015

Two components for one resistivity in LaVO3/SrTiO3 heterostructures

A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic mobility and a non-linear Hall effect at low temperature. In addition, a cross-over from a semiconducting state at high-temperature to a metallic state at low-temperature is observed, with a clear enhancement of the metallic character as the growth temperature increases. Optical absorption measurements combined with the two-bands analysis of the Hall effect show that the metallicity is induced by the diffusion of oxygen vacancies in the SrTiO3 substrate. These results allow to understand that the film/substrate heterostructure behaves as an original semiconducting-metallic parallel resistor, and electronic transport properties are consistently explained.

cond-mat.mtrl-sci↗

arXiv2009

On the strong impact of doping in the triangular antiferromagnet CuCrO2

Electronic band structure calculations using the augmented spherical wave method have been performed for CuCrO2. For this antiferromagnetic (T_N = 24 K) semiconductor crystallizing in the delafossite structure, it is found that the valence band maximum is mainly due to the t_2g orbitals of Cr^3+ and that spin polarization is predicted with 3 mu_B per Cr^3+. The structural characterizations of CuCr1-xMgxO2 reveal a very limited range of Mg^2+ substitution for Cr^3+ in this series. As soon as x = 0.02, a maximum of 1% Cr ions substituted by Mg site is measured in the sample. This result is also consistent with the detection of Mg spinel impurities from X-ray diffraction for x = 0.01. This explains the saturation of the Mg^2+ effect upon the electrical resistivity and thermoelectric power observed for x > 0.01. Such a very weak solubility limit could also be responsible for the discrepancies found in the literature. Furthermore, the measurements made under magnetic field (magnetic susceptibility, electrical resistivity and Seebeck coefficient) support that the Cr^4+ "holes", created by the Mg^2+ substitution, in the matrix of high spin Cr^3+ (S = 3/2) are responsible for the transport properties of these compounds.

cond-mat.str-el↗

arXiv2009

Electronic structure and thermoelectric properties of CuRh(1-x)MgxO2

Electronic structure calculations using the augmented spherical wave method have been performed for CuRhO2. For this semiconductor crystallizing in the delafossite structure, it is found that the valence band maximum is mainly due to the 4d t2g orbitals of Rh^{3+}. The structural characterizations of CuRh(1-x)MgxO2 show a broad range of Mg^{2+} substitution for Rh^{3+} in this series, up to about 12%. Measurements of the resistivity and thermopower of the doped systems show a Fermi liquid-like behavior for temperatures up to about 1000K, resulting in a large weakly temperature dependent power factor. The thermopower is discussed both within the Boltzmann equation approach as based on the electronic structure calculations and the temperature independent correlation functions ratio approximation as based on the Kubo formalism.

cond-mat.str-el↗