Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS

Tillmann Krauss; Frank Wessely; Udo Schwalke

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arXiv · 1404.2879

Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS

Tillmann Krauss·Frank Wessely·Udo Schwalke

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Abstract

In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW) devices. The technological cornerstones for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) substrate. The transistor type, i.e. n-type or p-type FET, is electrically selectable on the fly by applying an appropriate control-gate voltage which significantly increases the versatility and flexibility in the design of digital integrated circuits.

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Tillmann Krauss, Frank Wessely, Udo Schwalke. 2014-04-10. Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS. https://arxiv.org/abs/1404.2879

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