arXiv · 1404.7743
Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers
Abstract
A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices.
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J. Zuniga-Perez, E. Mallet, R. Hahe, M. J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J. Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, Feng Li, F. Réveret, F. Semond. 2014-04-30. Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers. https://doi.org/10.1063/1.4884120
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