Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal

Victor G. Bezchastnov; Andrei V. Korol; Andrey V. Solovyov

doi:10.1088/0953-4075/47/19/195401

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arXiv · 1405.6525

Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal

Victor G. Bezchastnov·Andrei V. Korol·Andrey V. Solovyov

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Abstract

A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bending yields narrow undulator-type spectral peaks in radiation from multi-GeV electrons and positrons channeling through the crystal. Benchmark theoretical results on the undulator are obtained by simulations of the channeling with a full atomistic approach to the projectile-crystal interactions over the macroscopic propagation distances. The simulations are facilitated by employing the MBN Explorer package for molecular dynamics calculations on the meso- bio- and nano-scales. The radiation from the ultra-relativistic channeling projectiles is computed within the quasi-classical formalism. The effects due to the quantum recoil are shown to be significantly prominent in the gamma-ray undulator radiation.

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Victor G. Bezchastnov, Andrei V. Korol, Andrey V. Solovyov. 2014-05-26. Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal. https://doi.org/10.1088/0953-4075/47/19/195401

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