Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 1406.3381

Evaluation of nonlocal approaches for modelling fracture near nonconvex boundaries

Peter Grassl·Dimitrios Xenos·Milan Jirásek·Martin Horák
View original source ↗Read source document ↗Export metadata ↓

Abstract

Integral-type nonlocal damage models describe the fracture process zones by regular strain profiles insensitive to the size of finite elements, which is achieved by incorporating weighted spatial averages of certain state variables into the stress-strain equations. However, there is no consensus yet how the influence of boundaries should be taken into account by the averaging procedures. In the present study, nonlocal damage models with different averaging procedures are applied to the modelling of fracture in specimens with various boundary types. Firstly, the nonlocal models are calibrated by fitting load-displacement curves and dissipated energy profiles for direct tension to the results of mesoscale analyses performed using a discrete model. These analyses are set up so that the results are independent of boundaries. Then, the models are applied to two-dimensional simulations of three-point bending tests with a sharp notch, a V-type notch, and a smooth boundary without a notch. The performance of the nonlocal approaches in modelling of fracture near nonconvex boundaries is evaluated by comparison of load-displacement curves and dissipated energy profiles along the beam ligament with the results of meso-scale simulations. As an alternative approach, elastoplasticity combined with nonlocal or over-nonlocal damage is also included in the comparative study.

Explore related subjects

cond-mat.mtrl-sci

Keep this discovery

BibTeXRIS

Peter Grassl, Dimitrios Xenos, Milan Jirásek, Martin Horák. 2014-06-12. Evaluation of nonlocal approaches for modelling fracture near nonconvex boundaries. https://doi.org/10.1016/j.ijsolstr.2014.05.023

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗