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arXiv · 1406.4341

Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition

S. D. Singh·R. S. Ajimsha·C. Mukherjee·Ravi Kumar·L. M. Kukreja·Tapas Ganguli
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Abstract

Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi scans in high resolution X-ray diffraction measurements are (0001) ZnO || (111) GaP and (-1 2 -1 0) ZnO || (-1 1 0) GaP respectively. Our results of epitaxy of ZnO and its intense excitonic photoluminescence with very weak defect luminescence suggest that (111) oriented GaP can be a potential buffer layer choice for the integration of ZnO based optoelectronic devices on Si(111) substrates.

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S. D. Singh, R. S. Ajimsha, C. Mukherjee, Ravi Kumar, L. M. Kukreja, Tapas Ganguli. 2014-06-17. Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition. https://arxiv.org/abs/1406.4341

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