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C. Mukherjee

Publications and source records attributed to C. Mukherjee.

7 recordsLinked to original sources

Development of a pyramidal magneto-optical trap for pressure sensing application

Here, we report the development and working of a compact rubidium (Rb) atom magneto-optical trap (MOT) operated with a hollow pyramidal mirror and a single laser beam. This type of compact MOT is suitable for developing portable atom-optic devices, as it works with less number of optical components as compared to conventional MOT setup. The application of this compact MOT setup for pressure sensing has been demonstrated.

physics.atom-ph

3D logic cells design and results based on Vertical NWFET technology including tied compact model

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the technology in the context of logic cell design. We describe a junctionless nanowire technology and associated compact model, which accurately describes fabricated device behavior in all regions of operations for transistors based on between 16 and 625 parallel nanowires of diameters between 22 and 50nm. We used this model to simulate the projected performance of inverter logic gates based on passive load, active load and complementary topologies and carry out an performance exploration for the number of nanowires in transistors. In terms of compactness, through a dedicated full 3D layout design, we also demonstrate a 1.4x reduction in lateral dimensions for the complementary structure with respect to 7nm FinFET-based inverters.

eess.SY

Fabrication of plasmonic surface relief gratings for the application of band-pass filter in UV-Visible spectral range

The measured experimental results of optical diffraction of 10, 5 and 3.4 micrometer period plasmonic surface relief grating are presented for the application of band-pass filter in visible spectral range. Conventional scanning electron microscopic (SEM) is used to fabricate the grating structures on the silver halide based film (substrate) by exposing the electron beam in raster scan fashion. Morphological characterization of the gratings is performed by atomic force microscopy (AFM) shows that the period, height and profile depends on the line per frame, beam spot, single line dwell time, beam current, and accelerating voltage of the electron beam. Optical transmission spectra of 10 micrometer period grating shows a well-defined localized surface plasmon resonance (LSPR) dip at ~366 nm wavelength corresponding to gelatin embedded silver nanoparticles of the grating structure. As the period of the grating reduces LSPR dip becomes prominent. The maximum first order diffraction efficiency (DE) and bandwidth for 10 micrometer period grating are observed as 4% and 400 nm in 350 nm to 800 nm wavelength range respectively. The DE and bandwidth are reduced up to 0.03% and 100 nm for 3.4 micrometer period grating. The profile of DE is significantly flat within the diffraction bandwidth for each of the gratings. An assessment of the particular role of LSPR absorption and varied grating period in the development of the profile of first order DE v/s wavelength are studied. Fabrication of such nano-scale structures in a large area using conventional SEM and silver halide based films may provide the simple and efficient technique for various optical devices applications.

physics.app-ph

Optical properties (uv-vis and ftir) of gamma irradiated polymethyl methacrylate (pmma)

The effect of gamma irradiation on the UV-Vis and FTIR spectroscopy of polymethyl methacrylate (PMMA) foils has been studied. A new absorption band is observed in the visible spectral range due to color centers induced in the gamma irradiated PMMA. This band shows maximum absorption (low transmission) for 10 kGy irradiation, which decreases and saturates after 50 kGy followed by a further increase at 500 kGy. The FTIR peaks show an increased absorption up to ~100 kGy irradiation, which reverses for higher doses. Broad band absorption is observed in FTIR spectra around 1600 and 3600 cm-1 due to absorption of moisture in the irradiated samples. The reduction in the absorption intensity at 1718 cm-1 in the irradiated PMMA (> 100 kGy) is found associated with the demerization of the carbonyl groups. An initial increase in the absorption of FTIR peaks with increase in the doses of irradiation is due to increased cross linking in the PMMA structure that is induced by the absorption of moisture. The demerization of carbonyl groups becomes dominant at higher doses of irradiation (~500 kGy).

physics.chem-ph

Localized surface plasmon resonance (LSPR) and refractive index sensitivity of vacuum evaporated nanostructured gold thin films

The plasmonic properties of vacuum evaporated nanostructured gold thin films having different types of nanoparticles are presented. The films with more than 6 nm thickness show presence of nanorods having non cylindrical shape with triangular base. Two characteristics plasmon bands have been recoreded in absorption spectra. First one occurs below 500 nm and other one at higher wavelength side. Both the peaks show dependence on the dielectric property of surroundings. The higher wavelength localized surface plasmon resonance (LSPR) peak shifts to higher wavelength with an increase in the nanoparticle size, surface roughness and refractive index of the surrounding (Methylene Blue dye coating). This shows that such thin films can be used as sensor for organic molecules with a refractive index sensitivity ranging from 250 - 305 nm/RIU (Refractive Index Unit).

cond-mat.mtrl-sci

Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition

Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi scans in high resolution X-ray diffraction measurements are (0001) ZnO || (111) GaP and (-1 2 -1 0) ZnO || (-1 1 0) GaP respectively. Our results of epitaxy of ZnO and its intense excitonic photoluminescence with very weak defect luminescence suggest that (111) oriented GaP can be a potential buffer layer choice for the integration of ZnO based optoelectronic devices on Si(111) substrates.

cond-mat.mtrl-sci

Valence Band Onset and Valence Plasmons of SnO2 and In2-xSnx O3 Thin Films

Valence band onset (Ev), valence band tail (VBT) and valence plasmons (VPs) have been studied as a function of sputtering of SnO2 and In2-xSnxO3 (ITO) thin films, using ultraviolet photoemission spectroscopy (UPS). Decrease in Ev with respect to the Fermi level and increase in the density of energy levels of VBT have been observed after 5 minutes of sputtering using Ar+ ions (500V). Bulk and surface components of VPs of Sn, SnO and SnO2 in sputtered SnO2 thin films have been observed in UPS spectra. Similarly, bulk and surface components of VPs of In, Sn and oxygen deficient ITO in sputtered ITO thin films have been observed in UPS spectra. Possible roles of Ev and increase in the density of energy levels of VBT are discussed in the mechanisms of current transport through heterojunctions of SnO2 with semiconductors.

cond-mat.mtrl-sci