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arXiv · 1407.3651

Multistate nonvolatile straintronics controlled by a lateral electric field

V. Iurchuk·B. Doudin·B. Kundys
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Abstract

We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.

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V. Iurchuk, B. Doudin, B. Kundys. 2014-07-24. Multistate nonvolatile straintronics controlled by a lateral electric field. https://doi.org/10.1088/0953-8984%2F26%2F29%2F292202

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