arXiv subjects

B. Doudin

Publications and source records attributed to B. Doudin.

16 recordsLinked to original sources

arXiv2024

Graphene magnetoresistance control by photoferroelectric substrate

Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by the bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to new a magnetic dimension and advance wireless operation for sensors and field-effect transistors.

cond-mat.mes-hall↗

arXiv2024

Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor

As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than two orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.

physics.app-ph↗

arXiv2023

On the photovoltaic effect asymmetry in ferroelectrics

Despite symmetrical polarization, the magnitude of a light-induced voltage is known to be asymmetric with respect to poling sign in many photovoltaic (PV) ferroelectrics (FEs). This asymmetry remains unclear and is often attributed to extrinsic effects. We show here for the first time that such an asymmetry can be intrinsic, steaming from the superposition of asymmetries of internal FE bias and electro-piezo-strictive deformation. This hypothesis is confirmed by the observed decrease of PV asymmetry for smaller FE bias. Moreover, the both PV effect and remanent polarization are found to increase under vacuum-induced expansion and to decrease for gas-induced compression, with tens percents tunability. The change in cations positions under pressure is analysed through the first-principle density functional theory calculations. The reported properties provide key insight for FE-based solar elements optimization.

cond-mat.mtrl-sci↗

arXiv2022

Photovoltaic-ferroelectric materials for the realization of all-optical devices

Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.

physics.optics↗

arXiv2020

Optically rewritable memory in a graphene/ferroelectric-photovoltaic heterostructure

Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical fluence. The competition between light-induced charge generation in ferroelectric-photovoltaic substrate with subsequent relaxation processes provides the selective photocarrier trapping control affecting the doping of 2D overlayer. These findings open the road to photonic control of 2D devices for all -optical modulators and a variety of all-optical logic circuits, memories and field-effect transistors.

physics.app-ph↗

arXiv2019

Magnetic Dead Layers in La$_{0.7}$Sr$_{0.3}$MnO$_3$ Revisited

The magnetic dead layers in films a few nanometers thick are investigated for La$_{0.7}$Sr$_{0.3}$MnO$_3$ on (001)-oriented SrTiO$_3$ (STO), LaAlO$_3$ (LAO) and (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrates. An anomalous moment found to persist above the Curie temperature of the La$_{0.7}$Sr$_{0.3}$MnO$_3$ films is not attributed to the films, but to oxygen vacancies at or near the surface of the substrate. The contribution to the moment from the substrate is as high as 20 $μ$B/nm$^2$ in the case of STO or LSAT. The effect is increased by adding an STO cap layer. Taking this d-zero magnetism into account, extrapolated magnetic dead layer thicknesses of 0.8 nm, 1.5 nm and 3.0 nm are found for the manganite films grown on LSAT, STO and LAO substrates, respectively. An STO cap layer eliminates the LSMO dead layer.

cond-mat.mtrl-sci↗

arXiv2018

Photovoltaic effect and photopolarization in Pb[(Mg1/3Nb2/3)0.68Ti0.32]O3 crystal

Ferroelectric photovoltaic materials are an alternative to semiconductor-based photovoltaics and offer the advantage of above bandgap photovoltage generation. However, there are few known compounds, and photovoltaic efficiencies remain low. Here, we report the discovery of a photovoltaic effect in undoped lead magnesium niobate-lead titanate crystal and a significant improvement in the photovoltaic response under suitable electric fields and temperatures. The photovoltaic effect is maximum near the electric-field-driven ferroelectric dipole reorientation, and increases threefold near the Curie temperature. Moreover, at ferroelectric saturation, the photovoltaic response exhibits clear remanent and transient effects. The transient-remanent combinations together with electric and thermal tuning possibilities indicate photoferroelectric crystals as emerging elements for photovoltaics and optoelectronics, relevant to all-optical information storage and beyond.

cond-mat.mtrl-sci↗

arXiv2016

Optical Writing of Magnetic Properties by Remanent Photostriction

We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO3. Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.

cond-mat.mtrl-sci↗

arXiv2016

Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$

Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically would be highly beneficial. Among other methods, the use of electric field induced deformation of piezoelectric elements is a promising low-energy approach for magnetization control. We investigate the system of piezoelectric substrate Pb[Zr$_x$Ti$_{1-x}$]O$_3$ with CoFe overlayers, extending the known reversible bistable electro-magnetic coupling to surface and multistate operations, adding the initial state reset possibility. Increasing the CoFe thickness improves the magnetoresistive sensitivity, but at the expenses of decreasing the strain-mediated coupling, with optimum magnetic thin film thickness of the order of 100 nm. The simplest resistance strain gauge structure is realized and discussed as a multistate memory cell demonstrating both resistive memory (RRAM) and magnetoresistive memory (MRAM) functionalities in a single structure.

cond-mat.mtrl-sci↗

arXiv2015

Multi-state and non-volatile control of graphene conductivity with surface electric fields

Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is demonstrated under low sub-coercive electric fields, with a susceptibility exceeding by more than two orders of magnitude those reported in a vertical gating geometry. Our example of reversible and low-power lateral control over 11 memory states in the graphene conductivity illustrates the possibility of multimemory and multifunctional applications, as top and bottom inputs remain accessible.

cond-mat.mtrl-sci↗

arXiv2015

Conductivity in organic semiconductors hybridized with the vacuum field

Organic semiconductors have generated considerable interest for their potential for creating inexpensive and flexible devices easily processed on a large scale [1-11]. However technological applications are currently limited by the low mobility of the charge carriers associated with the disorder in these materials [5-8]. Much effort over the past decades has therefore been focused on optimizing the organisation of the material or the devices to improve carrier mobility. Here we take a radically different path to solving this problem, namely by injecting carriers into states that are hybridized to the vacuum electromagnetic field. These are coherent states that can extend over as many as 10^5 molecules and should thereby favour conductivity in such materials. To test this idea, organic semiconductors were strongly coupled to the vacuum electromagnetic field on plasmonic structures to form polaritonic states with large Rabi splittings ca. 0.7 eV. Conductivity experiments show that indeed the current does increase by an order of magnitude at resonance in the coupled state, reflecting mostly a change in field-effect mobility as revealed when the structure is gated in a transistor configuration. A theoretical quantum model is presented that confirms the delocalization of the wave-functions of the hybridized states and the consequences on the conductivity. While this is a proof-of-principle study, in practice conductivity mediated by light-matter hybridized states is easy to implement and we therefore expect that it will be used to improve organic devices. More broadly our findings illustrate the potential of engineering the vacuum electromagnetic environment to modify and to improve properties of materials.

cond-mat.mtrl-sci↗

arXiv2014

Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions

We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

cond-mat.mes-hall↗

arXiv2014

Multistate nonvolatile straintronics controlled by a lateral electric field

We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.

cond-mat.mtrl-sci↗

arXiv2014

Subcoercive and multilevel ferroelastic remnant states with resistive readout

Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for applications. We propose here to take advantage of the multiferroic properties of ferroelectrics, using ferroelasticity to create a remnant strain, persisting after stressing the material by converse piezoelectricity means. While large electric fields are needed to switch the polarization, here writing occurs at subcoercive much lower field values, which can efficiently imprint multiple remnant strain states. A proof-of-principle device, with the simplest and non-optimized resistance strain detection design, is shown here to exhibit 13-memory states of high reproducibility and reliability. The related advantages in lower power consumption and limited device fatigue make our approach relevant for applications.

cond-mat.mtrl-sci↗

arXiv2012

Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3

We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.

cond-mat.mtrl-sci↗

arXiv2012

Photostriction in BiFeO3: wavelength dependence

In electrically polar solids optomechanical effects result from the combination of two main processes, electric field-induced strain and photon-induced voltages. Whereas the former depends on the electrostrictive ability of the sample to convert electric energy into mechanical energy, the latter is caused by the capacity of photons with appropriate energy to generate charges and, therefore, can depend on wavelength.We report here on mechanical deformation of BiFeO3 and its response time to discrete wavelengths of incident light ranging from 365 to 940 nm. The mechanical response of BiFeO3 is found to have two maxima in near-UV and green spectral wavelength regions.

cond-mat.mtrl-sci↗