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arXiv · 1408.1003

Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions

Ian Appelbaum·Holly N. Tinkey·Pengke Li
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Abstract

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, doping, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.

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Ian Appelbaum, Holly N. Tinkey, Pengke Li. 2014-08-05. Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions. https://doi.org/10.1103/physrevb.90.220402

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