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arXiv · 1409.3753

Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires

R. Lo Conte·E. Martinez·A. Hrabec·A. Lamperti·T. Schulz·L. Nasi·L. Lazzarini·F. Maccherozzi·S. S. Dhesi·B. Ocker·C. H. Marrows·T. A. Moore·M. Klaeui
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Abstract

We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion direction and velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI) with a DMI coefficient D=+0.06 mJ/m2. The positive DMI coefficient is interpreted to be a consequence of boron diffusion into the tantalum buffer layer during annealing. In a Pt\Co68Fe22B10\MgO nanowire CIDWM along the electron flow was observed, corroborating this interpretation. The experimental results are compared to 1D-model simulations including the effects of pinning. This advanced modelling allows us to reproduce the experiment outcomes and reliably extract a spin-Hall angle {\theta}SH=-0.11 for Ta in the nanowires, showing the importance of an analysis that goes beyond the currently used model for perfect nanowires.

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R. Lo Conte, E. Martinez, A. Hrabec, A. Lamperti, T. Schulz, L. Nasi, L. Lazzarini, F. Maccherozzi, S. S. Dhesi, B. Ocker, C. H. Marrows, T. A. Moore, M. Klaeui. 2014-09-12. Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires. https://doi.org/10.1103/physrevb.91.014433

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