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arXiv · 1409.4509

Au-Gated SrTiO3 Field-Effect Transistors with Large Electron Concentration and Current Modulation

Amit Verma·Santosh Raghavan·Susanne Stemmer·Debdeep Jena
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Abstract

We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO3. As a result of the large dielectric constant of SrTiO3 and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate ~1.6 x 1014 cm-2 electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to ~68 mA/mm, ~20x times larger than the best demonstrated SrTiO3 MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO3 in increasing the pinch off voltage of the MESFET.

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Amit Verma, Santosh Raghavan, Susanne Stemmer, Debdeep Jena. 2014-09-16. Au-Gated SrTiO3 Field-Effect Transistors with Large Electron Concentration and Current Modulation. https://doi.org/10.1063/1.4896275

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