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arXiv · 1409.4646

Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath

Li-Ping Yang·Christian Burk·Mattias Widmann·Sang-Yun Lee·Jörg Wrachtrup·Nan Zhao
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Abstract

In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$ ($p_{\rm{Si}}=4.7\%$) is about 4 times larger than that of $^{13}{\rm C}$ ($p_{\rm{C}}=1.1\%$), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field ($B>300~\rm{Gauss}$) is longer than that of nitrogen-vacancy (NV) centers in $^{13}{\rm C}$ nuclear spin bath in diamond. The reason for this counter-intuitive result is the suppression of heteronuclear-spin flip-flop process in finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.

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Li-Ping Yang, Christian Burk, Mattias Widmann, Sang-Yun Lee, Jörg Wrachtrup, Nan Zhao. 2014-09-16. Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath. https://doi.org/10.1103/physrevb.90.241203

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