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arXiv · 1410.2019

Resistive switching phenomena in TiOx nanoparticle layers for memory applications

Emanuelle Goren·Mariana Ungureanu·Raul Zazpe·Marcelo Rozenberg·Luis E. Hueso·Pablo Stoliar·Yoed Tsur·Fèlix Casanova
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Abstract

Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO_x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

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Emanuelle Goren, Mariana Ungureanu, Raul Zazpe, Marcelo Rozenberg, Luis E. Hueso, Pablo Stoliar, Yoed Tsur, Fèlix Casanova. 2014-10-08. Resistive switching phenomena in TiOx nanoparticle layers for memory applications. https://doi.org/10.1063/1.4897142

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