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Luis E. Hueso

Publications and source records attributed to Luis E. Hueso.

At least 19 recordsLinked to original sources

Observation of the magnetic spin Hall effect in a ferromagnet

The conventional spin Hall effect generates spin currents whose flow direction, spin polarization, and driving electric field are mutually perpendicular. Magnetic order lifts this symmetry restriction and enables additional time-reversal-symmetry-odd components of the spin-conductivity tensor, giving rise to the magnetic spin Hall effect (MSHE). These components also couple the generated spin polarization to the magnetic order, providing a degree of control absent in the conventional spin Hall effect. Although the MSHE has been observed in antiferromagnets, its experimental identification in conventional ferromagnets has remained elusive. Here, using a non-local lateral spin-valve geometry, we electrically identify the MSHE and its reciprocal effect in a perpendicularly magnetized Co-based multilayer. Reversal of the multilayer magnetization reverses the MSHE and magnetic inverse spin Hall signals, revealing their time-reversal-symmetry-odd character and magnetization control. By contrast, the conventional spin Hall and inverse spin Hall signals measured in the same devices remain unchanged under magnetization reversal, consistent with their time-reversal-symmetry-even character. We obtain a magnetic spin Hall angle of $θ_{\mathrm{MSH}} = (3.8 \pm 0.6)\%$, comparable in magnitude to the spin Hall angle of heavy metals commonly used in spintronic devices, such as Pt. These results establish the MSHE as a sizable, magnetically switchable spin-charge interconversion mechanism in conventional ferromagnets.

cond-mat.mes-hall

Boosting the Memory Window of Memristive Stacks via Engineered Interfaces with High Ionic Mobility

Realizing the potential of oxide-based memristive devices for high-density data storage and energy-efficient computing still relies on overcoming key technical challenges, including the need for a larger number of stable resistance states, faster switching speeds, lower SET/RESET voltages, improved endurance, and reduced variability. Addressing these limitations requires innovative material design strategies. Here, we demonstrate that introducing a thin layer of oxide-ion conductor SrCoO3-x between the metal and the SrTiO3-based memristive elements expands the number of distinguishable resistance states from about 8 to about 22. This modification also reduced the SET/RESET voltage by 50% and markedly improved device endurance, albeit with a trade-off of reduced state retention. To assess the performance of this architecture, we trained a two-layer fully connected neural network using the experimental SrTiO3/SrCoO3-x memristor characteristics on the MNIST handwritten digit dataset. Networks with hidden-layer sizes between 64 and 256 neurons achieved classification errors below 7%. Finally, we confirmed the transferability of this interface-engineering approach by applying it to HfOx-based devices, achieving a consistent enhancement in the resistive state window.

cond-mat.mtrl-sci

Direct demonstration of time-reversal-symmetry-breaking spin injection from a compensated magnet

The injection, propagation and detection of spin currents are essential physical processes in spintronics. So far, the separation of charge and spin currents was facilitated by the electrical spin injection from a ferromagnet (FM) or the injection by a relativistic spin Hall effect. The devices employed are lateral spin valves comprising spatially separated injection and detection electrodes, connected by a spin-propagation channel. The time-reversal symmetry (TRS) breaking FM spin injection is realized in a geometry with an electrical bias applied between the injection electrode and the channel and is modelled by a conserved spin-polarized drift current. In contrast, the spin injection by the T-symmetric relativistic spin Hall mechanism is driven by an electrical bias applied across the injection electrode alone, and is modelled by a non-conserved spin current transverse to the applied bias. In this work, we use a lateral spin valve with a Mn5Si3 injection electrode to directly demonstrate a TRS-breaking spin injection from a compensated magnet with a vanishing net magnetization. Specifically, the TRS-breaking is demonstrated by the fact that switching between time-reversed states of the compensated magnet changes the detected spin signal. Moreover, the TRS-breaking nature of the spin injection is observed in both experimental geometries with the different electrical biasing, while using the same detection electrode. We show that this unconventional spin-injection is consistent with different magnitudes and propagation angles of electrical currents in the spin-up and spin-down channel in a d-wave altermagnet. Here our symmetry analysis and first-principles calculations are based on the compensated collinear altermagnetic order which has provided a comprehensive microscopic interpretation of earlier structural, magnetic, and anomalous Hall and Nernst measurements in Mn5Si3 thin films.

cond-mat.mes-hall

Rate Programmable Ionic-Redox Switching with Tunable Volatility in CuCrP2S6

Metal thiophosphates are emerging as a multifunctional material platform for neuromorphic electronics due to their accessible polar phases and ion dynamics on biologically relevant timescales. While resistive switching in these materials is frequently attributed to ferroelectric or antiferroelectric polarization, the intrinsic role of ion dynamics remains underexplored. Here, we isolate and demonstrate purely ion-driven resistive switching in paraelectric CuCrP2S6. Robust and reproducible resistive switching is observed in the absence of measurable ferroelectricity. The conductance can be tuned through both voltage amplitude and sweep rate, revealing a rate dependence characteristic of ion dynamics. The resulting resistance states exhibit controllable volatility, where switching rate determines the decay time constant of the readout current, attributed to ionic relaxation. Using either inert or reactive electrodes, we observe electrical evidence of solid-state redox activity associated with the interfacial reduction of native Cu+ ions, enabling controlled formation of filamentary conduction pathways. Analysis of this process allows extraction of the Cu+ diffusion coefficient, providing quantitative insight into the underlying transport kinetics. The understanding of ionic-redox based resistive switching in CuCrP2S6 is crucial for unleashing its full potential as a material platform for dual- or multi-mode operation.

cond-mat.mtrl-sci

Second-Order Synaptic Memory using Inherent Plasticity of Moiré Superlattices

Achieving synaptic functionality electronically in a single-element quantum material is a fundamental challenge, as conventional methods rely on the introduction of extrinsic charge-traps or polar components. Here, we demonstrate that twisted double bilayer graphene (tDBLG) moiré superlattices, composed purely of carbon, exhibit electronic hysteresis and plasticity in presence of twist-angle disorder. Inversion symmetry breaking at the moiré length scales also gives rise to second-order nonlinear electrical response via disorder-mediated extrinsic mechanisms. Such second-order nonlinearity is highly tunable in both sign and magnitude by varying carrier concentration and vertical displacement field. We harness the coexistence of electronic plasticity and second-order nonlinearity to realize a second-order synaptic memory device. Our findings establish strained moiré carbon systems as a powerful new platform for energy-efficient neuromorphic computing, demonstrating that complex electronic functionality can emerge purely from symmetry breaking physics in a single-element material.

cond-mat.mes-hall

Ferroelectric hysteresis in singly aligned graphene-hBN moiré superlattices

Ferroelectric materials have the unique ability to maintain an electric polarization which can be reversed under an external applied electric field. This property makes them valuable for applications such as non-volatile random-access memories, transducers, actuators and electro optic modulators. Recently, emergent unconventional ferroelectricity has been demonstrated in moiré superlattices of bilayer graphene and hexagonal boron nitride (hBN) hosting non centrosymmetric stacking order. Whether this phenomenon is also present in noncentrosymmetric single layer graphene (SLG)-hBN moiré superlattices is still under debate. Here we demonstrate a ferroelectric response in an SLG-hBN moiré superlattice. Through Hall measurements, we pinpoint the origin of the hysteretic behavior to abnormal charge screening due to the moiré superlattice band and estimate the spontaneous polarization magnitude in the moiré superlattice structure. Temperature dependent measurements confirm that the hysteretic behavior persists from 2K up to room temperature, opening opportunities for high-mobility, ultrathin non-volatile devices

cond-mat.mes-hall

Surface lone-pair polarization probed by quantum-geometric transport in tellurium

Stereochemically active lone pairs are ubiquitous microscopic sources of polarity in molecules and solids, but their collective behavior in crystals is often hidden by symmetry or confined to surfaces. Here we show that quantum-geometry transport provides a sensitive probe of surface lone-pair polarization in trigonal tellurium. This surface polarization appears microscopically as an inversion-odd dipolar component of the crystal potential, which shifts the center of mass of Bloch wavepackets and produces quantum-geometric corrections to their velocity. We describe this lone-pair polar texture through a minimal three-component lattice model, and we show that the resulting linear and nonlinear transport coefficients probe, respectively, the second and first moments of the net polarization field. Because rectified voltages in tellurium flakes are directly proportional to the surface lone-pair polarization, our results provide a microscopic route to understanding and engineering polarization-driven, quantum-geometric electronic devices based on tellurium allotropes.

cond-mat.mes-hall

Signatures of time-reversal-symmetry breaking in multiband 2H-TaS2 revealed by zero-field Josephson nonreciprocity

Superconductors that spontaneously break time-reversal symmetry host complex order parameters and are widely regarded as a hallmark of unconventional superconductivity. Whether such symmetry breaking can also arise in superconductors with nominally isotropic spin-singlet pairing remains an open question. Here we report a zero-field Josephson diode effect in noncentrosymmetric 2H-TaS2/2H-NbSe2 van der Waals junctions. The diode efficiency shows no systematic correlation with supercurrent amplitude, TaS2 thickness, or normal-state resistance, arguing against simple extrinsic, purely interfacial, or transparency-driven mechanisms. Time-reversal-symmetric scenarios are further tested using symmetry-controlled and molecule-intercalated control devices, in which the nonreciprocal response is absent or strongly reduced. Normal-state Hall transport in TaS2 exhibits a nonlinear response consistent with multiband correlated electronic states. Within a Josephson framework, our modelling shows that interband scattering acts as a phase-locking mechanism generating an intrinsic anomalous phase difference and a nonsinusoidal asymmetric current-phase relation, leading to finite zero-field rectification. Together, zero-field Josephson nonreciprocity and nonlinear Hall transport provide complementary evidence for a multiband superconducting phase structure in 2H-TaS2, consistent with intrinsic time-reversal-symmetry breaking.

cond-mat.supr-con

A new helical InSeI polymorph: crystal structure and polarized Raman spectroscopy study

Tetragonal InSeI is an interesting low-dimensional metal chalcohalide due to its composition and anisotropic crystal structure composed of helical chains, which give rise to optoelectronic properties with potential application in photodetectors, optical thermometers, and spintronic devices. However, experimental works lack on the study of its anisotropic or chiral behavior. Here we present the crystal structure of an unreported InSeI polymorph and study its lattice dynamics in bulk crystals and exfoliated nanowires by polarized Raman spectroscopy for two non-equivalent crystallographic planes. We determine the orientation of the helical chains and distinguish between crystallographic planes by linearly polarized measurements, evaluating the angle-dependent intensity of the modes, which allows assigning each mode to its representation. Circularly polarized Raman measurements do not reveal chiral phonons, despite the helical chains and anisotropic crystal structure. These results offer insight into the crystal structure of InSeI, which is fundamental for the fabrication of orientation-dependent optoelectronic and spintronic devices.

cond-mat.mtrl-sci

Anomalous Nonlinear Magnetoconductivity in van der Waals Magnet CrSBr

Nonlinear magnetoconductivity (NLMC) is a nonreciprocal transport response arising in non-centrosymmetric materials. However, this ordinary NLMC signal vanishes at zero magnetic field, limiting its potential for applications. Here, we report the observation of an anomalous NLMC controlled by internal order parameters such as the magnetization or Néel vectors. We achieve this response by breaking both inversion and time-reversal symmetry in artificial van der Waals heterostructures based on the magnetic CrSBr and insulating hBN. The nonreciprocal signal can be tuned between two different states in ferromagnetic monolayer CrSBr and among four different states in antiferromagnetic bilayer CrSBr, thanks to its metamagnetic transition. Remarkably, this output signal in the ferromagnetic (antiferromagnetic) state of CrSBr is three (one) orders of magnitude higher than those previously measured. A conductivity scaling analysis reveals the Berry connection polarizability as the origin of the anomalous NLMC. Our results pave the way for high-frequency rectifiers with magnetically switchable output polarity as well as for an efficient electrical readout of the magnetic state of antiferromagnetic materials.

cond-mat.mes-hall

Engineering magnetism in hybrid organic-inorganic metal halide perovskites

The chemical and structural flexibility of hybrid organic-inorganic metal halide perovskites (HOIPs) provides an ideal platform for engineering not only their well-studied optical properties, but also their magnetic ones. In this review we present HOIPs from a new perspective, turning the attention to their magnetic properties and their potential as new class of on-demand low-dimensional magnetic materials. Focusing on HOIPs containing transition metals, we comprehensively present the progress that has been made in preparing, understanding and exploring magnetic HOIPs. First, we briefly introduce HOIPs in terms of composition and crystal structure and examine the synthesis protocols commonly used to prepare those showing magnetic properties. Then, we present their rich magnetic behavior and phenomenology; discuss their origin and guidelines for tuning them by changing the perovskite phase, chemical composition and dimensionality; and showcase their potential application in magneto-optoelectronics and spintronics. Finally, we describe the current challenges in the field, such as their integration into devices, as well as the emerging possibilities of moving from magnetic doping to pure transition metal-based HOIPs, which will motivate further studies in the future.

cond-mat.mtrl-sci

Galvanic intercalation of molecular cations into van der Waals materials

The intercalation of molecular species between the layers of van der Waals (vdW) crystals is a powerful approach to combine the remarkable physical properties of vdW materials with the chemical versatility of organic molecules. However, the full transformative potential of molecular intercalation remains underexplored, largely due to the lack of simple, broadly applicable methods that preserve high crystalline quality down to the few-layer limit. Here, we introduce a simple galvanic approach to intercalate different molecules into various vdW materials under ambient conditions, leveraging the low reduction potential of selected metals. We employ our method, which is particularly well-suited for the in-situ intercalation of few-layer-thick crystals, to intercalate nine vdW materials, including magnets and superconductors, with molecules ranging from conventional alkylammonium ions to metallorganic and bio-inspired chiral cations. Notably, intercalation leads to an unprecedented transition from antiferromagnetic to ferrimagnetic ordering in α-RuCl3 and to a molecule-dependent enhancement of the superconducting transition in 2H-TaS2. These results establish our approach as a versatile technique for engineering atomically thin quantum materials and heterostructures, unlocking the transformative effects of molecular intercalation.

cond-mat.mtrl-sci

Ferromagnetism above 200 K in organic-ion intercalated CrSBr

CrSBr is a van der Waals magnetic semiconductor exhibiting antiferromagnetic order below 140 K. It has emerged as a promising platform for engineering 2D magnetism because its intertwined electronic, optical, and magnetic properties can be profoundly modified via external stimuli such as electrical gating or magnetic fields. However, other strategies for tuning magnetism in layered materials, such as molecular intercalation, remain largely unexplored for CrSBr. Here, we demonstrate that the intercalation of tetramethylammonium (TMA) and tetrapropylammonium (TPA) ions into CrSBr induces a transition from antiferromagnetic to ferromagnetic order, while significantly enhancing the magnetic transition temperature to 190 K (TMA) and 230 K (TPA). The resulting intercalates are air-stable and exhibit large, hysteretic magnetoresistance exceeding 60% at 50 K in the TPA case. Besides, intercalation introduces symmetry-breaking structural changes in each CrSBr plane, revealed by Raman microscopy and corroborated by density functional theory (DFT) calculations. These findings highlight molecular intercalation as a powerful and versatile route to tailor the magnetic properties of CrSBr and unlock its potential to fabricate robust, high-temperature 2D magnetic devices.

cond-mat.mtrl-sci

Unveiling Photoluminescence Signatures of Magneto-Optical Coupling in Layered Hybrid Manganese Chloride Perovskites

Understanding the interplay between magnetic ordering and light emission is crucial for developing magneto-optical technologies. However, this phenomenon is poorly understood since observations of this coupling vary significantly across materials. In this context, hybrid organic-inorganic metal halide perovskites (HOIPs) that incorporate Mn2+ ions are a chemically and structurally tunable platform for exploring this phenomenon, since they exhibit magnetic ordering and photoluminescence (PL) emission. Here, we study two antiferromagnetic Mn-based HOIPs with different organic cations that result in distinct lattice stiffness, Mn2+-Mn2+ distance and octahedral distortion. Temperature-dependent PL excitation spectroscopy reveals changes in crystal field splitting energy and Racah parameters well above the Néel temperature (TN), indicating the emergence of Mn2+-Mn2+ magnetic interactions prior to reach long-range magnetic ordering. These variations align with the observed changes in temperature-PL evolution. The compound with a more rigid lattice shows stronger changes closer to TN, suggesting combined effects of magnetic polarons and spin-canting. In contrast, magnetic polaron-induced magnetic modifications prevail in the HOIP with a softer lattice. These results reveal the complexity of the magneto-optical coupling in Mn-based HOIPs and provide new insights into this field extensible to other 2D materials that exhibit this phenomenon with potential for advanced magneto-optical applications.

cond-mat.mtrl-sci

A molecular-spin photovoltaic device

We fabricated a C60-based molecular spin photovoltaic device that integrated a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response can be modified under the application of a small magnetic field, with a magnetophotovoltage of up to 5% at room temperature. Device functionalities include a magnetic current inverter and the presence of diverging magnetocurrent at certain illumination levels that could be useful for sensing. Completely spin-polarized currents could be created by balancing the external partially spin polarized injection with the photogenerated carriers.

cond-mat.mtrl-sci

Characterizing the Backscattered Spectrum of Mie Spheres

This study describes both experimentally and theoretically an important hitherto undiscovered feature of the scattering of micron_sized spherical objects when illuminated with highly focused circularly polarized light. This is a regime of high experimental relevance which has not been described in full detail. The experiments are complemented with the analytical formulas explaining the field scattered directed toward the backward hemispace. In particular, it is proven that this field shows a very regular oscillatory dependency with the optical size. This phenomenon is typically hidden in the total scattered field, as the field is scattered much less toward the backward hemisphere than toward the forward one. These regular oscillations are measured experimentally. It is proven that, by analyzing them, it is possible to determine the index of refraction of isolated micron_sized particles, opening new paths for applications in sensing and metrology.

physics.optics

Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures

Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in spintronics is to develop systems that can efficiently generate spin currents and enable their long-distance transport. Here, we demonstrate a graphene (Gr)/heavy metal (HM) heterostructure system that combines strong charge-spin interconversion efficiency, induced by the spin Hall effect, with a long spin diffusion length. By employing an industry-friendly magnetron sputtering technique, we deposit HM layers onto few-layer Gr while minimizing structural damage. The proximity effect from the HM enhances the spin Hall angle of Gr while limiting the reduction in its spin diffusion length. Additionally, the spin Hall angle can be tuned via an applied gate voltage, offering high controllability of the system. Importantly, these properties are observed across heterostructures composed of different HMs, indicating the generality of this approach. Our findings establish Gr/HM heterostructures as a scalable and versatile platform for spin current generation, paving the way for advanced spintronic devices with high efficiency, long spin propagation, and straightforward fabrication processes.

cond-mat.mes-hall

Degenerate monolayer Ising superconductors via chiral-achiral molecule intercalation

Engineering unconventional superconductors is a central challenge in condensed matter physics. Molecule-intercalated TaS2 superlattices have recently been reported to host such states, yet their origin remains debated, underscoring the urgent need for controlled, device-integrated studies. Here, we report that nanometer-thick TaS2 and NbSe2 intercalated with chiral and achiral organic cations instead exhibit robust monolayer-like Ising superconductivity, with no evidence of unconventional pairing. Using high-quality superlattices integrated into devices, we disentangle the roles of interlayer coupling and charge transfer in shaping their superconducting behavior. In TaS2, intercalation induces interlayer decoupling regardless of molecular size or symmetry, yielding monolayer-like Ising superconductivity. NbSe2 instead retains quasi-three-dimensional transport, with a gradual Ising enhancement and near-monolayer behavior only at the largest interlayer spacing. Transport remains reciprocal across all superlattices, consistent with preserved inversion symmetry and incompatible with parity-breaking superconductivity and noncentrosymmetric monolayers. We attribute the behavior to electronically detached monolayers with opposite spin-split bands, coupled through thermal and tunneling processes, which overall preserve inversion symmetry. These findings establish molecular intercalation compounds as a robust, device-ready, platform for engineering advanced superconducting superlattices.

cond-mat.supr-con