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arXiv · 1410.2413

High-performance controllable ambipolar infrared phototransistors based on graphene-quantum dot hybrid

Ran Wang·Yating Zhang·Haiyang Wang·Xiaoxian Song·Lufan Jin·Haitao Dai·Sen Wu·Jianquan Yao
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Abstract

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode devices. In this paper, we presented and fabricated conveniently-controlled grapheme / PbS QD hybrid FETs. Through the investigation on electric and optoelectronic properties, the ambipolar FETs (normally OFF) can be switched ON by raising gate voltage (VG) up to 3.7 V and -0.8 V in the first and third quadrants. Near these thresholds (VT) each carrier species shows comparable mobility (~ 300 cm2V-1s-1). Photo-responsivity reach ~ 107 A/W near each threshold and it will linearly increases with (VG-VT). These hybrid FETs become strongly competitive candidates for devices in flexible integrated circuits with low cost, large area, low-energy consumption and high performances.

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Ran Wang, Yating Zhang, Haiyang Wang, Xiaoxian Song, Lufan Jin, Haitao Dai, Sen Wu, Jianquan Yao. 2014-10-09. High-performance controllable ambipolar infrared phototransistors based on graphene-quantum dot hybrid. https://arxiv.org/abs/1410.2413

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