Field Evaporation of Grounded Arsenic Doped Silicon Clusters

Zexiang Deng; Juncong She; Zhibing Li; Weiliang Wang

doi:10.1142/s0218625x15500699

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arXiv · 1410.3053

Field Evaporation of Grounded Arsenic Doped Silicon Clusters

Zexiang Deng·Juncong She·Zhibing Li·Weiliang Wang

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Abstract

We have investigated field evaporation of grounded arsenic (As) doped silicon (Si) clusters consist of 52 atoms with density functional theory to mimic Si nano structures of hundreds of nanometers long standing on a substrate. Six cluster structures with different As doping concentrations and dopant locations are studied. The critical evaporation electric fields are found to be lower for clusters with higher doping concentrations and doping sites closer to the surface. We attribute the difference to the difference in binding energies corresponding to the different As-doping concentrations and to the doping locations. Our theoretical study could shed light on the stability of nano apexs under high electric field.

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Zexiang Deng, Juncong She, Zhibing Li, Weiliang Wang. 2014-10-12. Field Evaporation of Grounded Arsenic Doped Silicon Clusters. https://doi.org/10.1142/s0218625x15500699

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