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arXiv · 1412.1986

Two-dimensional modelling of electron flow through a poorly conducting layer

J. P. Black·C. J. W. Breward·P. D. Howell
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Abstract

Motivated by contact resistance on the front side of a crystalline silicon solar cell, we formulate and analyse a two-dimensional mathematical model for electron flow across a poorly conducting (glass) layer situated between silver electrodes, based on the drift-diffusion (Poisson-Nernst-Planck) equations. We devise and validate a novel spectral method to solve this model numerically. We find that the current short-circuits through thin glass layer regions. This enables us to determine asymptotic expressions for the average current density for two different canonical glass layer profiles.

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J. P. Black, C. J. W. Breward, P. D. Howell. 2014-12-05. Two-dimensional modelling of electron flow through a poorly conducting layer. https://arxiv.org/abs/1412.1986

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