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arXiv · 1412.4817

High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

Binh-Minh Nguyen·Wei Yi·Ramsey Noah·Jacob Thorp·Marko Sokolich
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Abstract

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2 and approaching 100,000 cm2/Vs near the charge neutrality point (CNP). Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridization gap.

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Binh-Minh Nguyen, Wei Yi, Ramsey Noah, Jacob Thorp, Marko Sokolich. 2014-12-15. High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate. https://doi.org/10.1063/1.4906589

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