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Binh-Minh Nguyen

Publications and source records attributed to Binh-Minh Nguyen.

14 recordsLinked to original sources

Vehicle Drift Emergence: Continuous Evolution from Grip Driving to the Handling Limit via Boundary Exploration Learning Model Predictive Control

Automated drift controllers commonly track a prescribed drift equilibrium, sideslip reference, or trajectory. These formulations establish how to execute drift, whereas the continuous transition from grip driving to drift near the handling limit remains unresolved. This paper defines drift emergence in a repetitive lap time minimization task, where neither the controller objective nor the reward contains an explicit drift reference. A boundary exploration learning model predictive controller (BE-LMPC) constructs an empirical safe set and a locally shifted terminal cost from completed laps. By iteratively improving spatial speed allocation under a fixed global speed bound, the controller progressively explores larger sideslip and yaw rate envelopes while preserving recoverability. As lap performance improves, sustained sideslip and pronounced yaw motion emerge while the rear axle approaches saturation. Analysis shows that, when external conditions vary smoothly, the transition from tire adhesion to sliding does not itself cause abrupt changes in tire force or vehicle state. The combined-slip Fiala model satisfies this continuity condition at the transition. At a tire road friction coefficient of 0.6, lap time decreases from 49.95 s on Lap~3 to 25.50 s on Lap~12, with drift first emerging on Lap~11. Lap~12 reaches 16.5$^\circ$ sideslip and 0.894 rear axle utilization. In contrast, no drift is detected for friction coefficients from 0.8 to 1.2; at 1.2, a similar peak speed is achieved with only 0.483 rear axle utilization. These results characterize drift as a conditional continuation of limit handling that emerges when increasing performance demand approaches the available tire capacity, rather than as a separately prescribed motion mode.

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Dodging the Moose: Experimental Insights in Real-Life Automated Collision Avoidance

The sudden appearance of a static obstacle on the road, i.e. the moose test, is a well-known emergency scenario in collision avoidance for automated driving. Model Predictive Control (MPC) has long been employed for planning and control of automated vehicles in the state of the art. However, real-time implementation of automated collision avoidance in emergency scenarios such as the moose test remains unaddressed due to the high computational demand of MPC for evasive action in such hazardous scenarios. This paper offers new insights into real-time collision avoidance via the experimental imple- mentation of MPC for motion planning after a sudden and unexpected appearance of a static obstacle. As the state-of-the-art nonlinear MPC shows limited capability to provide an acceptable solution in real-time, we propose a human-like feed-forward planner to assist when the MPC optimization problem is either infeasible or unable to find a suitable solution due to the poor quality of its initial guess. We introduce the concept of maximum steering maneuver to design the feed-forward planner and mimic a human-like reaction after detecting the static obstacle on the road. Real-life experiments are conducted across various speeds and level of emergency using FPEV2-Kanon electric vehicle. Moreover, we demonstrate the effectiveness of our planning strategy via comparison with the state-of- the-art MPC motion planner.

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A Discussion on Stabilization of Frequency Control for Power Systems

How to practically maintain the frequency stability of large-scale power systems by a decentralized way is a simple but non-trivial question. In other words, is it possible to design any local controller without understanding the other controlled areas and with less understanding of network structure? With respect to the special properties of physical interaction between the local areas, this paper suggests two existing theories for tackling this issue. Firstly, passivity theory is shown to be a candidate for frequency control problem using swing equation. Based on the passivity of swing dynamics, it is possible to guarantee the system stability by designing for each local area a passive controller. We further extend the passivity approach to the hierarchically decentralized control system with unknown communication delay. Secondly, we discuss the application of generalized frequency variable (GFV) to the frequency control problem using area-control-error. Each local controller is designed such that each local subsystem follows a nominal model set. Utilizing GFV theory, we present a triad of conditions that sufficiently guarantee the system stability. The conditions can be tested conveniently by a limited set of inequalities established from the GFV and the eigenvalues of the physical interaction matrix. The effectiveness, limitation, and challenge of two theories are discussed by design examples with numerical simulations.

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$h/e$ superconducting quantum interference through trivial edge states in InAs

Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable $h/e$ SQUID signal is observed that, as we find, stems from crossed Andreev states.

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Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $β=$ 28.5 meV$Å$ and the Rashba coefficient $α$ is tuned from 75 to 53 meV$Å$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.

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Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells

Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in $e^2/h$ steps and a non-trivial Berry phase.

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Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots

We perform transport measurements on double quantum dots defined in Ge/Si core/shell nanowires and focus on Pauli spin blockade in the regime where tens of holes occupy each dot. We identify spin blockade through the magnetic field dependence of leakage current. We find both a dip and a peak in the leakage current at zero field. We analyze this behavior in terms of the quantum dot parameters such as coupling to the leads, interdot tunnel coupling as well as spin-orbit interaction. We find a lower bound for spin-orbit interaction with $l_{\rm so}=500$ nm. We also extract large and anisotropic effective Land$\rm \acute{e}$ g-factors, with larger g-factors in the direction perpendicular to the nanowire axis in agreement with previous studies and experiments but with larger values reported here.

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High critical magnetic field superconducting contacts to Ge/Si core/shell nanowires

Contacts between high critical field superconductors and semiconductor nanowires are important in the context of topological quantum circuits in which superconductivity must be sustained to high magnetic fields. Here we demonstrate gate-tunable supercurrent in NbTiN-Ge/Si core/shell nanowire-NbTiN junctions. We observe supercurrents up to magnetic fields of 800 mT. The induced soft superconducting gap measured by co-tunneling through a quantum dot is 220 μeV. To improve contact transparency, we deposit an aluminum interlayer prior to NbTiN and observe a systematic change in the device pinch-off voltages with aluminum thickness. We inform future multi-step device fabrication by observing that aluminum anneals with the Ge/Si nanowire at 180° celsius, the baking temperature of common electron beam lithography resists.

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Quantized conductance and large g-factor anisotropy in InSb quantum point contacts

Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.

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Edge Transport in the Trivial Phase of InAs/GaSb

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.

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Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.

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Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures

Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1Ω \cdot mm is achieved at 1.8K.

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Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual-gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.

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High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2 and approaching 100,000 cm2/Vs near the charge neutrality point (CNP). Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridization gap.

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