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arXiv · 1501.02214

Optical properties of two-dimensional gallium chalcogenide films

O. Del Pozo-Zamudio·S. Schwarz·M. Sich·I. A. Akimov·M. Bayer·R. C. Schofield·E. A. Chekhovich·B. J. Robinson·N. D. Kay·O. V. Kolosov·A. I. Dmitriev·G. V. Lashkarev·D. N. Borisenko·N. N. Kolesnikov·A. I. Tartakovskii
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Abstract

Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.

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O. Del Pozo-Zamudio, S. Schwarz, M. Sich, I. A. Akimov, M. Bayer, R. C. Schofield, E. A. Chekhovich, B. J. Robinson, N. D. Kay, O. V. Kolosov, A. I. Dmitriev, G. V. Lashkarev, D. N. Borisenko, N. N. Kolesnikov, A. I. Tartakovskii. 2015-03-17. Optical properties of two-dimensional gallium chalcogenide films. https://arxiv.org/abs/1501.02214

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