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B. J. Robinson

Publications and source records attributed to B. J. Robinson.

4 recordsLinked to original sources

Shear Forces and Heat Conductance in Nanoscale Junctions

Nanoscale solid-solid contacts define a wealth of material behaviours from the electrical and thermal conductivity in modern electronic devices to friction and losses in micro- and nanoelectromechanical systems. For modern ultra-high integration processor chips, power electronic devices and thermoelectrics one of the most essential, but thus far most challenging, aspects is the assessment of the heat transport at the nanoscale sized interfaces between their components. While this can be effectively addressed by a scanning thermal microscopy, or SThM, which demonstrates the highest spatial resolution to thermal transport to date, SThM quantitative capability is undermined by the poorly defined nature of the nanoscale contact between the probe tip and the sample. Here we show that simultaneous measurements of the shear force and the heat flow in the probe-sample junction shows distinct correlation between thermal conductance and maximal shear force in the junction for multiple probe-material combinations. Quantitative analysis of this correlation confirmed the intrinsic ballistic nature of the heat transport in the tip-surface nanoscale contact suggesting that they are, ultimately, composed of near-atomic sized regions. Furthermore, in analogy to the Wiedemann-Franz law, which links electrical and thermal conductivity in metals, we suggest and experimentally confirm a general relation that links shear strength and thermal conductance in nanoscale contacts via the fundamental material properties of heat capacity and heat carrier group velocity, thus opening new avenues for quantitative exploration of thermal transport on the nanoscale.

cond-mat.mes-hall

Optical properties of two-dimensional gallium chalcogenide films

Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.

cond-mat.mes-hall

Nanothermal Characterization of Amorphous and Crystalline Phases in Chalcogenide Thin Films with Scanning Thermal Microscopy

The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By performing SThM measurements and applying quantitative physical models to two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.

cond-mat.mtrl-sci

Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional capping of MoS2 with SiO2 and SiN, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials.

cond-mat.mtrl-sci