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arXiv · 1501.06606

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

S. Nakhaie·J. M. Wofford·T. Schumann·U. Jahn·M. Ramsteiner·M. Hanke·J. M. J. Lopes·H. Riechert
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Abstract

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

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S. Nakhaie, J. M. Wofford, T. Schumann, U. Jahn, M. Ramsteiner, M. Hanke, J. M. J. Lopes, H. Riechert. 2015-01-26. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy. https://doi.org/10.1063/1.4921921

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