arXiv subjects

H. Riechert

Publications and source records attributed to H. Riechert.

12 recordsLinked to original sources

arXiv2026

Fermion parity of an Andreev molecule probed by nonlocal Josephson effect

Fermion parity is a fundamental property of superconducting many-body states. Here, we show that the global fermion parity of a delocalized superconducting state can be detected locally by exploiting the nonlocal Josephson effect. Using a carbon nanotube-based Andreev molecule formed by two coupled quantum-dot Josephson junctions, we observe a pronounced nonlocal Josephson response and demonstrate the formation of delocalized Andreev molecular states extending across both junctions. We further show that changes in the molecular ground-state parity manifest as characteristic $π$-phase shifts in the nonlocal response. Supported by a minimal theoretical model, these results identify global fermion parity as an experimentally accessible degree of freedom in hybrid superconducting circuits that can be readily revealed through the nonlocal Josephson effect.

cond-mat.mes-hall↗

arXiv2025

Towards a $\cos(2φ)$ Josephson element using aluminum junctions with well-transmitted channels

We introduce a novel method for fabricating all-aluminum Josephson junctions with highly transmitted conduction channels. Such properties are typically associated with structures requiring intricate fabrication processes, such as atomic contacts or hybrid junctions based on semiconducting nanowires and 2D materials. In contrast, our approach relies solely on standard nanofabrication techniques. The resulting devices exhibit a key signature of high-transmission junctions - Multiple Andreev Reflections (MAR) - in their current-voltage characteristics. Furthermore, we propose a straightforward superconducting circuit design based on these junctions, enabling the implementation of a parity-protected qubit.

cond-mat.mes-hall↗

arXiv2025

The carbon nanotube gatemon qubit

Gate-tunable transmon qubits are based on quantum conductors used as weak links within hybrid Josephson junctions. These gatemons have been implemented in just a handful of systems, all relying on extended conductors, namely epitaxial semiconductors or exfoliated graphene. Here we present the coherent control of a gatemon based on a single molecule, a one-dimensional carbon nanotube, which is integrated into a circuit quantum electrodynamics architecture. The measured qubit spectrum can be tuned with a gate voltage and reflects the quantum dot behaviour of the nanotube. Our ultraclean integration, using a hexagonal boron nitride substrate, results in record coherence times of 200ns for carbon nanotube-based qubits. Furthermore, we investigate its decoherence mechanisms, thus revealing a strong gate dependence and identifying charge noise as a limiting factor. On top of positioning carbon nanotubes as contenders for future quantum technologies, our work paves the way for studying microscopic fermionic processes in low-dimensional quantum conductors.

cond-mat.mes-hall↗

arXiv2024

Josephson junctions based on ultraclean carbon nanotubes

We present a technique for integrating ultraclean carbon nanotubes into superconducting circuits, aiming to realize Josephson junctions based on one-dimensional elementary quantum conductors. This technique primarily involves depositing the nanotube in the final step, thus preserving it from the inherent contaminations of nanofabrication and maintaining contact solely with superconducting electrodes and a crystalline hBN substrate. Through transport measurements performed in both the normal and superconducting states, we demonstrate that our method yields high-quality junctions with Josephson energies suitable for quantum device applications, such as carbon nanotube-based superconducting qubits.

cond-mat.mes-hall↗

arXiv2024

Two-tone spectroscopy of high-frequency quantum circuits with a Josephson emitter

We perform two-tone spectroscopy on quantum circuits, where high-frequency radiation is generated by a voltage-biased superconductor-normal-superconductor Josephson junction and detection is carried out by an ancillary microwave resonator. We implement this protocol on two different systems, a transmon qubit and a $λ/4$ resonator. We demonstrate that this two-tone Josephson spectroscopy operates well into the millimeter-wave band, reaching frequencies larger than 80 GHz, and is well-suited for probing highly coherent quantum systems.

cond-mat.mes-hall↗

arXiv2024

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) using III/V flux ratios larger than one to compensate for Ga desorption, (ii) introducing a two-step growth procedure, and (iii) using an AlN buffer layer to favor GaN nucleation. The GaN nanowire ensembles grown at so far unexplored substrate temperatures exhibit excitonic transitions with sub-meV linewidths and the low-temperature photoluminescence spectra are comparable to those of state-of-the-art free-standing GaN layers grown by hydride vapor phase epitaxy.

cond-mat.mtrl-sci↗

arXiv2023

Josephson Diode Effect in Andreev Molecules

We propose a new platform for observing the Josephson diode effect: the Andreev molecule. This nonlocal electronic state is hosted in circuits made of two closely spaced Josephson junctions, through the hybridization of the Andreev states. The Josephson diode effect occurs at the level of one individual junction while the other one generates the required time-reversal and spatial-inversion symmetry breaking. We present a microscopic description of this phenomenon based on fermionic Andreev states, focusing on single channels in the short limit, and we compute both supercurrent and energy spectra. We demonstrate that the diode efficiency can be tuned by magnetic flux and the junctions transmissions, and can reach $45~\%$. Going further, by analyzing the Andreev spectra, we demonstrate the key role played by the continuum, which consists of leaky Andreev states and is largely responsible for the critical current asymmetry. On top of proposing an experimentally accessible platform, this work elucidates the microscopic origin of the Josephson diode effect at the level of the fermionic Andreev states.

cond-mat.mes-hall↗

arXiv2018

The MICADO first light imager for ELT: its astrometric performance

We report on our ongoing efforts to ensure that the MICADO NIR imager reaches differential absolute (often abbreviated: relative) astrometric performance limited by the SNR of typical observations. The exceptional 39m diameter collecting area in combination with a powerful multi-conjugate adaptive optics system (called MAORY) brings the nominal centroiding error, which scales as FWHM/SNR, down to a few 10 uas. Here we show that an exceptional effort is needed to provide a system which delivers adequate and calibrateable astrometric performance over the full field of view (up to 53 arcsec diameter).

astro-ph.IM↗

arXiv2017

In/GaN(0001)-$\boldsymbol{{\mathsf{\left(\!\sqrt{3}\times\!\sqrt{3}\right)\!R30^{\circ}}}}$ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{R}30^{\circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In$_{0.33}$Ga$_{0.67}$N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In,Ga)N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a barrier thickness of 6 monolayers, the superlattice gives rise to a photoluminescence band at 3.16 eV, close to the theoretically predicted values for these structures.

cond-mat.mtrl-sci↗

arXiv2015

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of $570\pm20$ and $840\pm30$ meV below the conduction band minimum. The physical origin of these deep level states is discussed. The temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.

cond-mat.mes-hall↗

arXiv2015

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

cond-mat.mtrl-sci↗

arXiv2012

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer-layer.

cond-mat.mtrl-sci↗