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arXiv · 1501.06670

Spin transport and spin conversion in compound semiconductor with non-negligible spin-orbit interaction

Akiyori Yamamoto·Yuichiro Ando·Teruya Shinjo·Tetsuya Uemura·Masashi Shiraishi
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Abstract

A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE) of GaAs contributed to the electromotive force detected with a platinum (Pt) spin detector. The electromotive force detected by the Pt spin detector had opposite polarity to that measured with a Ni80Fe20/GaAs bilayer due to the opposite direction of spin current flow, which demonstrates successful spin transport in the n-GaAs channel. A two-dimensional spin-diffusion model that considers the ISHE in the n-GaAs channel reveals an accurate spin diffusion length of t_s = 1.09 um in n-GaAs (NSi = 4x10^16 cm-3) at RT, which is approximately half that estimated by the conventional model.

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Akiyori Yamamoto, Yuichiro Ando, Teruya Shinjo, Tetsuya Uemura, Masashi Shiraishi. 2015-01-27. Spin transport and spin conversion in compound semiconductor with non-negligible spin-orbit interaction. https://doi.org/10.1103/physrevb.91.024417

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