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arXiv · 1501.06903

Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy

P. Xu·M. L. Ackerman·S. D. Barber·J. K. Schoelz·D. Qi·P. M. Thibado·V. D. Wheeler·L. O. Nyakiti·R. L. Myers-Ward·C. R. Eddy, Jr.·D. K. Gaskill
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Abstract

Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a ~100 X 200 nm^2 area.

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P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, D. Qi, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy, Jr., D. K. Gaskill. 2015-01-27. Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy. https://doi.org/10.7567/jjap.52.035104

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