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arXiv · 1502.03043

Strength of the dominant scatterer in graphene on silicon oxide

Jyoti Katoch·Duy Le·Simranjeet Singh·Rahul Rao·Talat S. Rahman·Masa Ishigami
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Abstract

A large variability of carrier mobility of graphene-based field effect transistors hampers graphene science and technology. We determine the scattering strength of the dominant scatterer responsible for the variability of graphene-based transistors on silicon oxide. The strength of the scatterer is found to be more consistent with charged impurities than with resonant impurities.

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Jyoti Katoch, Duy Le, Simranjeet Singh, Rahul Rao, Talat S. Rahman, Masa Ishigami. 2015-07-24. Strength of the dominant scatterer in graphene on silicon oxide. https://arxiv.org/abs/1502.03043

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