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arXiv · 1502.06364

Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Yunzhong Chen·Felix Trier·Takeshi Kasama·Dennis V. Christensen·Nicolas Bovet·Han Li·Zoltan I. Balogh·Karl T. S. Thydén·Wei Zhang·Sadegh Yazdi·Poul Norby·Nini Pryds·Søren Linderoth
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Abstract

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,000 cm2V-1s-1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.

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Yunzhong Chen, Felix Trier, Takeshi Kasama, Dennis V. Christensen, Nicolas Bovet, Han Li, Zoltan I. Balogh, Karl T. S. Thydén, Wei Zhang, Sadegh Yazdi, Poul Norby, Nini Pryds, Søren Linderoth. 2015-02-23. Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface. https://doi.org/10.1021/nl504622w

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