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arXiv · 1502.06365

Nanosized Vertical Organic Spin-Valves

R. Göckeritz·N. Homonnay·A. Müller·T. Richter·B. Fuhrmann·G. Schmidt
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Abstract

A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large-area spin-valves indicates that the magnetoresistance of both, large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

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R. Göckeritz, N. Homonnay, A. Müller, T. Richter, B. Fuhrmann, G. Schmidt. 2015-02-23. Nanosized Vertical Organic Spin-Valves. https://doi.org/10.1063/1.4914830

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