Role of substrate temperature at graphene synthesis in arc discharge

Xiuqi Fang; Alexey Shashurin; Michael Keidar

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arXiv · 1503.04083

Role of substrate temperature at graphene synthesis in arc discharge

Xiuqi Fang·Alexey Shashurin·Michael Keidar

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Abstract

The substrate temperature required for synthesis of graphene in an arc discharge plasma was studied. It was shown that an increase of copper substrate temperature up to the melting point leads to an increase in the amount of graphene production and the quality of graphene sheets. Favorable range of substrate temperatures for arc-based graphene synthesis was determined, and it is in a relatively narrow range of about 1210-1340 K.

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Xiuqi Fang, Alexey Shashurin, Michael Keidar. 2015-03-13. Role of substrate temperature at graphene synthesis in arc discharge. https://arxiv.org/abs/1503.04083

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