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arXiv · 1503.04147

Suspended graphene devices with local gate control on an insulating substrate

Florian R. Ong·Zheng Cui·Muhammet A. Yurtalan·Cameron Vojvodin·Michał Papaj·Jean-Luc F. X. Orgiazzi·Chunqing Deng·Mustafa Bal·Adrian Lupascu
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Abstract

We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77~K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials.

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Florian R. Ong, Zheng Cui, Muhammet A. Yurtalan, Cameron Vojvodin, Michał Papaj, Jean-Luc F. X. Orgiazzi, Chunqing Deng, Mustafa Bal, Adrian Lupascu. 2015-09-18. Suspended graphene devices with local gate control on an insulating substrate. https://doi.org/10.1088/0957-4484%2F26%2F40%2F405201

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