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arXiv · 1503.05906

Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface

A. Fête·C. Cancellieri·D. Li·D. Stornaiuolo·A. D. Caviglia·S. Gariglio·J. -M. Triscone
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Abstract

We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900°C) display carrier densities in the range of $\approx 2-5 \times 10^{13} \textrm{ cm}^{-2}$ and mobilities of $\approx 1000 \textrm{ cm}^2/\textrm{Vs}$ at 4K. Reducing their carrier density by field effect to $8\times 10^{12} \textrm{ cm}^{-2}$ lowers their mobilites to $\approx 50 \textrm{ cm}^2/\textrm{Vs}$ bringing the conductance to the weak-localization regime.

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A. Fête, C. Cancellieri, D. Li, D. Stornaiuolo, A. D. Caviglia, S. Gariglio, J. -M. Triscone. 2015-03-19. Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface. https://doi.org/10.1063/1.4907676

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