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arXiv · 1504.03179

Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

A. V. Sachenko·A. I. Shkrebtii·R. M. Korkishko·V. P. Kostylyov·N. P. Kulish·I. O. Sokolovskiy·M. Evstigneev
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Abstract

Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection coefficient, $Q$, of the electron-hole pairs generated by beta-electrons is derived taking into account the existence of the dead layer. We show that the collection coefficient of beta-electrons emitted by a \Tr-source to a GaAs p-n junction is close to 1 in a broad range of electron lifetimes in the junction, ranging from $10^{-9}$ to $10^{-7}$ s. For the combination \Pm/GaAs, $Q$ is relatively large ($\ge 0.4$) only for quite long lifetimes (about $10^{-7}$ s) and large thicknesses (about $100\,\mu$m) of GaAs p-n junctions. For realistic lifetimes of minority carriers and their diffusion coefficients, the open-circuit voltage realized due to the irradiation of a GaAs p-n junction by beta-particles is obtained. The attainable beta-conversion efficiency $\eta$ in the case of a \Tr/GaAs combination is found to exceed that of the \Pm/GaAs combination.

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A. V. Sachenko, A. I. Shkrebtii, R. M. Korkishko, V. P. Kostylyov, N. P. Kulish, I. O. Sokolovskiy, M. Evstigneev. 2015-04-13. Analysis of the attainable efficiency of a direct-bandgap betavoltaic element. https://doi.org/10.1088/0022-3727/48/45/455101

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