arXiv subjects

A. V. Sachenko

Publications and source records attributed to A. V. Sachenko.

At least 19 recordsLinked to original sources

arXiv2026

Modeling key characteristics of high-efficiency gallium arsenide solar cells

The paper proposes a theoretical approach to modeling the key characteristics of highly efficient gallium arsenide-based solar cells (SCs), using a one-dimensional SC model. The following recombination mechanisms are considered in the modeling: radiative recombination, interband Auger recombination, Shockley-Reed-Hall (SRH) recombination, surface recombination, recombination in the space charge region (SCR), and recombination along the perimeter of the structure. A simple empirical formula is proposed to describe the recombination along the perimeter of the SC structure. The GaAs band-gap narrowing effect is also taken into consideration. The main results are obtained under the assumption that the times of Shockley-Reed-Hall recombination and recombination in the SCR are the same. The effect of photon recycling (re-emission and re-absorption) is taken into account in a model similar to the one we used previously to simulate key characteristics of high-efficiency single-crystal silicon SCs. The model additionally uses absorption analysis at different doping levels of gallium arsenide. A good agreement was achieved between the experimental and theoretical dependencies. The results obtained in this work can be used to optimize the characteristics of highly efficient SCs based on direct-band semiconductors, particularly gallium arsenide (GaAs). Keywords: solar cell, high efficiency, modeling, gallium arsenide, recombination mechanisms, external quantum efficiency, parameter optimization.

cond-mat.mtrl-sci↗

arXiv2024

Characterization and optimization of high-efficiency crystalline silicon solar cells

Since the photoconversion efficiency $η$ of the silicon-based solar cells (SCs) under laboratory conditions is approaching the theoretical fundamental limit, further improvement of their performance requires theoretical modeling and/or numerical simulation to optimize the SCs parameters and design. The existing numerical approaches to modeling and optimization of the key parameters of high-efficiency solar cells based on monocrystalline silicon (c-Si), the dominant material in photovoltaics, are described. It is shown that, in addition to the four usually considered recombination processes, namely, Shockley-Read-Hall, surface, radiative, and band-to-band Auger recombination mechanisms, the non-radiative exciton Auger recombination and recombination in the space charge region (SCR) have to be included. To develop the analytical SC characterization formalism, we proposed a simple expression to model the wavelength-dependent external quantum efficiency (EQE) of the photocurrent near the absorption edge. Based on this parameterization, the theory developed allows for calculating and optimizing the base thickness-dependent short-circuit current, the open-circuit voltage, and the SC photoconversion efficiency. We proved that the approach to optimize the solar cell parameters, especially its thickness and the base doping level, is accurate and demonstrated for the two Si solar cells reported in the literature, one with an efficiency of 26.7 % and the other with the record efficiency of 26.81 %. It is shown that the formalism developed allows further optimization of the solar cell thickness and doping level, thus increasing the SC efficiency to an even higher value.

cond-mat.mtrl-sci↗

arXiv2023

Space-charge region recombination in monocrystalline silicon-based barrier structures with long lifetimes and its impact on key characteristics of high-efficiency solar cells

The recombination rate in the space charge region (SCR) of a silicon-based barrier structure with long Shockley-Reed-Hall lifetime is calculated theoretically taking into account the concentration gradient of excess electron-hole pairs in the base region. The effects of the SCR lifetime and the applied voltage on the structure's ideality factor are analyzed. The ideality factor is significantly reduced by the concentration gradient of electron-hole pairs. This mechanism provides an increase of the effective lifetime compared to the case when it is insignificant, which is realized at sufficiently low pair concentrations. The theoretical results are shown to be in agreement with experimental data.

cond-mat.other↗

arXiv2019

Synthesis and investigation of the properties of organic-inorganic perovskite films with non-contact optical methods

Presented in this work are the results of our study of the photoelectric properties of perovskite $CH_3NH_3PbI_{2.98}Cl_{0.02}$ films deposited on a glass substrate using the spin-coating method. The unit cell parameters of the perovskite are determined using x-ray diffractometry. It is shown that the film morphology represents a net of non-oriented needle-like structures with significant roughness and porosity. In order to investigate the properties of the films obtained, non-contact methods were used, such as transmission and reflection measurements and the measurements of the spectral characteristics of the small-signal surface photovoltage. The method of spectral characteristics of the low-signal surface photovoltage and the transmission method reveal information about the external quantum yield in the films studied and about the diffusion length of minority carriers in the perovskite films. As a result of this analysis, it has been established that the films obtained are naturally textured, and their bandgap is 1.59 eV. It is shown that in order to correctly determine absorption coefficient and the bandgap values, Urbach effect should be accounted for. Minority carriers' diffusion length is longer than the film thickness, which is equal to 400 nm. The films obtained are promising materials for solar cells.

physics.app-ph↗

arXiv2017

The influence of base thickness on textured silicon solar cells' efficiency

The transformation of the long-wavelength edge of the external quantum exit (EQE) formation mechanisms in textured silicon solar cells (SCs) is revealed, depending on their thickness. Expressions for experimental EQE dependences on the long-wavelength absorption edge are obtained for a wide range of base thicknesses (100-450 μm). The expressions allow optimal SC base thickness values calculation from the condition of maximal photoconversion efficiency taking into account surface recombination velocity. In particular, it was found that optimal 100-μm base thickness corresponds to the surface recombination velocity of about 3 cm/s.

physics.app-ph↗

arXiv2017

Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells

Surface recombination affects both light-to-electricity and electricity-to-light conversion in solar cells (SCs). Therefore, quantitative analysis and reduction of surface recombination is an important direction in SC research. In this work, electroluminescence (EL) intensity and photoconversion efficiency of a set of 93 large-area (239\,cm$^2$) a-Si:H/c-Si heterojunction SCs (HJSCs) are measured under AM1.5 conditions at 298 K. The HJSC samples differed only in surface recombination velocity, $S$, but otherwise were identical. Variation in $S$ was due to the variation of the chemical conditions under which the samples were treated. It is established that EL quantum efficiency, is affected by $S$ much more strongly than photoconversion efficiency, $η$: namely, the reduction of the latter from 20.5\% to 18\% due to an increase of $S$ is accompanied by a decrease of the former by more than an order of magnitude. In HJSCs with well passivated surfaces, i.e. low $S$, EL efficiency reached 2.1\%, which is notably higher than the known values in silicon homojunction diodes. For temperature-dependent measurements of EL and dark I-V curves, one of the samples was cut into small-area (1 cm$^2$) pieces. It was found that EL intensity as a function of temperature develops a maximum at $T$ = 223 K. At low temperatures, the current at weak bias is shown to be due to tunneling mechanism. A theoretical model is developed that explains all these findings quantitatively.

physics.app-ph↗

arXiv2017

Modeling photoconversion efficiency of perovskite solar cells

A theoretical approach to photoconversion efficiency modeling in perovskite p-i-n structures is developed. The results of this modeling compare favorably with the experiment and indicate that the surfaces of the perovskite solar cells (SCs) are naturally textured. It is shown that photoconversion efficiency in the limiting case of negligible Shockley-Read-Hall and surface recombination and in the absence of optical losses reaches the value of 29%. In the realistic case, the current-voltage curve ideality factor equals 2. This value is not due to recombination in the space-charge region; rather, it can be explained by taking into account the effect of the rear surface and high excitation level.

cond-mat.mes-hall↗

arXiv2016

Influence of excitonic effects on luminescence quantum yield in silicon

Nonradiative exciton lifetime in silicon is determined by comparison of the experimental and theoretical curves of bulk minority charge carriers lifetime on doping and excitation levels. This value is used to analyze the influence of excitonic effects on internal luminescence quantum yield at room temperature, taking into account both nonradiative and radiative exciton lifetimes. A range of Shockley-Hall-Reed lifetimes is found, where excitonic effects lead to an increase of internal luminescence quantum yield.

cond-mat.mtrl-sci↗

arXiv2015

Photoconversion in the HIT solar cells: Theory vs experiment

We obtain theoretical expressions for the photocurrent in the Heterojunction solar cells with Intrinsic Thin layer (HIT cells). Our calculations take into account tunneling of electrons and holes through wide-bandgap layers of $α$-Si:H or $α$-SiC:H. We introduce the criteria, under which tunneling does not lead to the deterioration of solar cell characteristics, in particular, to the reduction of the short-circuit current and open-circuit voltage. We propose an algorithm to compute the photoconversion efficiency of HIT elements, taking into account the peculiarities of the open-circuit voltage generation, in particular, its rather high values. We test our theoretical predictions against the experimental results. For this, we fabricate HIT elements with the efficiency of about $20\,\%$. We measured the temperature dependence of the short-circuit current, open-circuit voltage, photoconversion power, and fill factor of the current-voltage curve of these elements in a wide temperature range from 80 to 420\,K. In the low-temperature range, the open-circuit voltage and the photoconversion power decrease on cooling. At $T \ge 200$\,K, the theoretical expressions and the experimental curves agree rather well. The behavior of the fill factor and output power at low temperatures is explained by the increase of the series resistance on cooling. We discuss the reasons behind the reduction of the power temperature coefficient in HIT elements. We show that they are related to the low value of the combined surface and volume recombination rate. Finally, we derive a theoretical expression for the HIT element's operation temperature under natural working conditions.

cond-mat.mtrl-sci↗

arXiv2015

Silicon solar cells efficiency analysis. Doping type and level optimization

The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) is performed for n-type and p-type bases. The case is considered when the Shockley-Read-Hall recombination in the silicon bulk is determined by the deep level of Fe. It is shown that due to the asymmetry of the recombination parameters of this level the photovoltaic conversion efficiency is increasing in the SC with the n-type base and decreasing in the SC with the p-type base with the increase in doping. Two approximations for the band-to-band Auger recombination lifetime dependence on the base doping level are considered when performing the analysis. The experimental results are presented for the key characteristics of the solar cells based on $α-Si:H-n-Si$ heterojunctions with intrinsic thin layer (HIT). A comparison between the experimental and calculated values of the HIT cells characteristics is made. The surface recombination velocity and series resistance are determined from it with a complete coincidence of the experimental and calculated SC parameters' values.

cond-mat.mtrl-sci↗

arXiv2015

Efficiency analysis of betavoltaic elements

The conversion of energy of electrons produced by a radioactive source into electricity in a Si and SiC $\textit{p-n}$ junctions is modeled. The features of the generation function describing the electron-hole pair production by an electron flow and the emergence of a "dead layer" are discussed. The collection efficiency, $Q$, describing the rate of electron-hole pair production by incident beta particles, is calculated taking into account the presence of the "dead layer". It is shown that in the case of high-grade Si $\textit{p-n}$ junctions, the collection efficiency, $Q$, of electron-hole pairs created by a high-energy electrons flux, e.g. Pm-147 beta flux, is close or equal to 1 in a wide range of electron energies. For SiC junctions, $Q$ is large enough (about 1) only for electrons with relatively low energies of about 5 keV, as produced, e.g., by a tritium source, and decreases rapidly with further increase of electron energy. The conditions, under which the influence of the "dead layer" on the collection efficiency is negligible, are determined. The open-circuit voltage is obtained for realistic values of the minority carriers' diffusion coefficient and lifetime in Si and SiC $\textit{p-n}$ junctions irradiated by a high-energy electrons flux. Our calculations allow us to estimate the attainable efficiency of betavoltaic elements.

cond-mat.mtrl-sci↗

arXiv2015

Modeling of high-efficiency silicon solar cells in realistic operating conditions

The selfconsistent model for the temperature dependence of photoconversion efficiency $η$ for highly efficient silicon solar cells (SCs) is developed. It is demonstrated that effect of the efficiency decrease due to increasing temperature is less pronounced in the SCs with lower surface recombination velocity, thus offering a possibility to improve the cells' performance. The photoconversion efficiency of the high efficiency silicon solar cells is modeled for the realistic ambient conditions. The SC operating temperature is determined by self-consistently solving the photocurrent, photovoltage, and energy balance equations, considering both radiative and convective cooling mechanisms. The SC temperature is shown to be substantially higher than the ambient temperature even at very high convection coefficients, such as, e.g., 300 $W / (m^2 \cdot K)$, used in our examples. The photoconversion efficiency for this case is substantially below the efficiency of thermally stabilized SC, for which the operating temperature is close to the external temperature. The open-circuit voltage and photoconversion efficiency of the high-quality silicon solar cells under concentrated illumination are also investigated including the tradeoff between SCs heating and cooling processes.

cond-mat.mtrl-sci↗

arXiv2015

On the issue of ohmicity of Schottky contacts

An analysis is made of the conditions for ohmic contacts realization in the case of Schottky contacts. Based on the classical notions about the mechanisms of current flow, we consider the generalized model of Schottky contact that takes into account the thermionic current of majority charge carriers and recombination current of minority charge carriers in Schottky contacts with a dielectric gap. An analysis of the results given by that model made it possible to obtain ohmicity criteria for Schottky contacts and compare the conditions for low injection level and ohmicity of Schottky contacts in the case of silicon-based contacts. It is shown that conditions for Schottky contact ohmicity do not coincide with those for p-n junctions.

cond-mat.mtrl-sci↗

arXiv2015

Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection coefficient, $Q$, of the electron-hole pairs generated by beta-electrons is derived taking into account the existence of the dead layer. We show that the collection coefficient of beta-electrons emitted by a \Tr-source to a GaAs p-n junction is close to 1 in a broad range of electron lifetimes in the junction, ranging from $10^{-9}$ to $10^{-7}$ s. For the combination \Pm/GaAs, $Q$ is relatively large ($\ge 0.4$) only for quite long lifetimes (about $10^{-7}$ s) and large thicknesses (about $100\,μ$m) of GaAs p-n junctions. For realistic lifetimes of minority carriers and their diffusion coefficients, the open-circuit voltage realized due to the irradiation of a GaAs p-n junction by beta-particles is obtained. The attainable beta-conversion efficiency $η$ in the case of a \Tr/GaAs combination is found to exceed that of the \Pm/GaAs combination.

cond-mat.mtrl-sci↗

arXiv2015

Energy renormalization and Mott transition in n-GaAs and n-GaN

In this paper, we investigate renormalization of charge carrier effective masses and bandgap narrowing in n-GaAs and wurtzite-type n-GaN over a wide range of temperatures and dopant concentrations. The calculations are based on the Green's function formalism. Contrary to the previous works, we consider the regions below as well as above the Mott transition. Special attention is paid to formation of donor subband and condition for the Mott transition. We also take into account the effects caused by optical phonons. The latter strongly depend on the doping level because of dynamic screening. It is shown that three specific doping levels may be set off in n-GaN. They correspond to 1) Mott transition, 2) resonance amplification of optical phonon-plasmon, and 3) full dynamic screening of optical phonons, respectively. Contrary to the case of n-GaN, the effect of full dynamic screening cannot be implemented in n-GaAs because of stronger nonparabolicity of conduction band.

cond-mat.mtrl-sci↗

arXiv2014

Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells

To accurately calculate efficiencies $η$ of experimentally produced multijunction solar cells (MJSCs) and optimize their parameters, we offer semi-analytical photoconversion formalism that incorporates radiative recombination, Shockley-Read-Hall (SRH) recombination, surface recombination at the front and back surfaces of the cells, recombination in the space charge region (SCR) and the recombination at the heterojunction boundaries. Selfconsistent balance between the MJSC temperature and efficiency was imposed by jointly solving the equations for the photocurrent, photovoltage, and heat balance. Finally, we incorporate into the formalism the effect of additional photocurrent decrease with subcell number increase. It is shown that for an experimentally observed Shockley-Read-Hall lifetimes, the effect of re-absorption and re-emission of photons on MJSC efficiency can be neglected for non-concentrated radiation conditions. A significant efficiency $η$ increase can be achieved by improving the heat dissipation using radiators and bringing the MJSC emissivity to unity, that is closer to black body radiation rather than grey body radiation. Our calculated efficiencies compare well with other numerical results available and are consistent with the experimentally achieved efficiencies. The formalism can be used to optimize parameters of MJSCs for maximum photoconversion efficiency.

cond-mat.mtrl-sci↗

arXiv2014

New formalism for selfconsistent parameters optimization of highly efficient solar cells

We analysed self-consistently photoconversion efficiency of direct-gap A3B5 semicon-ductors based solar cells and optimised their main physical characteristics. Using gallium ar-senide (GaAs) as the example and new efficient optimization formalism, we demonstrated that commonly accepted light re-emission and re-absorption in solar cells (SC) in technologically produced GaAs (in particular, with solid- or liquid-phase epitaxy) are not the main factors re-sponsible for high photoconversion efficiency. As we proved instead, the doping level of the base material and its doping type as well as Shockley-Read-Hall (SRH) and surface recombination velocities are much more important factors responsible for the photoconversion. We found that the maximum photoconversion efficiency (about 27% for AM1.5 conditions) in GaAs with typical parameters of recombination centers can be reached for p-type base doped at $2 \cdot 10^{17}$ cm$^{-3}$. The open circuit voltage $V_{OC}$ formation features are analyzed. The optimization provides a significant increase in $V_{OC}$ and the limiting photoconversion efficiency close to 30%. The approach of this research allows to predict the expected solar cells (for both direct-gap and indirect-band semiconductor) characteristics if material parameters are known. Obtained formalism allows to analyze and to optimize mass production both tandem solar cell (TSC) and one-junction SC parameters.

cond-mat.mtrl-sci↗

arXiv2014

The features of contact resistivity behavior at helium temperatures for InP- and GaAs-based ohmic contacts

Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results can be explained within the framework of the mechanism of current flow through metal shunts (associated with dislocations) penetrating into the semiconductor bulk, with allowance being made for electron freeze-out at helium temperatures. Contact ohmicity in the 4.2/30K temperature range is due to accumulation band bending near shunt ends at the metal/semiconductor interface.

cond-mat.mtrl-sci↗