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arXiv · 1505.00170

Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

J. A. Haigh·C. Ciccarelli·A. C. Betz·A. Irvine·V. Novák·T. Jungwirth·J. Wunderlich
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Abstract

The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction.

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J. A. Haigh, C. Ciccarelli, A. C. Betz, A. Irvine, V. Novák, T. Jungwirth, J. Wunderlich. 2015-05-01. Anisotropic magneto-capacitance in ferromagnetic-plate capacitors. https://doi.org/10.1103/physrevb.91.140409

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