arXiv · 1505.00652
Tailoring the electronic transitions of NdNiO_3 films through (111)_pc oriented interfaces
Abstract
Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the Néel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)_pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
S. Catalano, M. Gibert, V. Bisogni, F. He, R. Sutarto, M. Viret, P. Zubko, R. Scherwitzl, G. A. Sawatzky, T. Schmitt, J. -M. Triscone. 2015-05-04. Tailoring the electronic transitions of NdNiO_3 films through (111)_pc oriented interfaces. https://doi.org/10.1063/1.4919803
Cite the original work for its findings. Save a collection to share your selection of sources.