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arXiv · 1505.02306

Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface

Mingda Li·Cui-Zu Chang·Brian. J. Kirby·Michelle Jamer·Wenping Cui·Lijun Wu·Yimei Zhu·Don Heiman·Ju Li·Jagadeesh Moodera
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Abstract

Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI / magnetic-TI EuS / Sb$_{2-x}$V$_x$Te$_3$ hybrid heterostructure, where V doping is used to drive the TI (Sb$_{2}$Te$_3$) magnetic. We observe an artificial antiferromagnetic-like structure near the MI/TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping provides insights into controllable engineering of magnetic order using a hybrid heterostructure.

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Mingda Li, Cui-Zu Chang, Brian. J. Kirby, Michelle Jamer, Wenping Cui, Lijun Wu, Yimei Zhu, Don Heiman, Ju Li, Jagadeesh Moodera. 2015-05-09. Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface. https://doi.org/10.1103/physrevlett.115.087201

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