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arXiv · 1505.03224

Optical performance monitoring at 640Gb/s via slow-light in a silicon nanowire

B. Corcoran·C. Monat·M. Pelusi·C. Grillet·T. P. White·L. O Faolain·T. F. Krauss·B. J. Eggleton·David J. Moss
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Abstract

We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 micron) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640 Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems.

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B. Corcoran, C. Monat, M. Pelusi, C. Grillet, T. P. White, L. O Faolain, T. F. Krauss, B. J. Eggleton, David J. Moss. 2015-05-13. Optical performance monitoring at 640Gb/s via slow-light in a silicon nanowire. https://doi.org/10.1364/oe.18.007770

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