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arXiv · 1505.04590

Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility

Li-Chuan Zhang·Guangzhao Qin·Wu-Zhang Fang·Hui-Juan Cui·Qing-Rong Zheng·Qing-Bo Yan·Gang Su
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Abstract

By means of extensive ab initio calculations, a new two-dimensional (2D) atomic material tin selenide monolayer (coined as tinselenidene) is predicted to be a semiconductor with an indirect gap (1.45 eV) and a high hole mobility (of order 10000 cm2V-1S-1), and will bear an indirect-direct gap transition under a rather low strain (<0.5 GPa). Tinselenidene has a very small Young's modulus (20-40 GPa) and an ultralow lattice thermal conductivity (<3 Wm-1K-1 at 300 K), making it probably the most flexible and most heat-insulating material in known 2D atomic materials. In addition, tinseleniden has a large negative Poisson's ratio of -0.17, thus could act as a 2D auxetic material. With these intriguing properties, tinselenidene could have wide potential applications in thermoelectrics, nanomechanics and optoelectronics.

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Li-Chuan Zhang, Guangzhao Qin, Wu-Zhang Fang, Hui-Juan Cui, Qing-Rong Zheng, Qing-Bo Yan, Gang Su. 2015-05-18. Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility. https://doi.org/10.1038/srep19830

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