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arXiv · 1505.05196

Layer-Transferred MoS2/GaN PN Diodes

Edwin W. Lee II·Choong Hee Lee·Pran K. Paul·Lu Ma·William D. McCulloch·Sriram Krishnamoorthy·Yiying Wu·Aaron Arehart·Siddharth Rajan
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Abstract

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS2 films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of approximately 0.2 eV for the transferred MoS2/GaN heterojunction. This conduction band offset was confirmed by internal photoemission (IPE) measurements. The energy band lineup of the MoS2/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications.

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Edwin W. Lee II, Choong Hee Lee, Pran K. Paul, Lu Ma, William D. McCulloch, Sriram Krishnamoorthy, Yiying Wu, Aaron Arehart, Siddharth Rajan. 2015-05-19. Layer-Transferred MoS2/GaN PN Diodes. https://doi.org/10.1063/1.4930234

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