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arXiv · 1506.03967

Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model

R. M. Peleshchak·N. Y. Kulyk·M. V. Doroshenko
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Abstract

The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Within the framework of this model, the profile of spatial-temporal distribution of vacancies (interstitial atoms) in the stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs is calculated. It is shown that in the case of a stationary state ($t > 5τ_d^{(2)}$), the concentration of vacancies in the inhomogeneously compressed interlayer is smaller relative to the initial average value $N_{d0}^{(2)}$ by 16%

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R. M. Peleshchak, N. Y. Kulyk, M. V. Doroshenko. 2015-06-12. Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model. https://doi.org/10.5488/cmp.18.23602

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