arXiv subjects

R. M. Peleshchak

Publications and source records attributed to R. M. Peleshchak.

8 recordsLinked to original sources

arXiv2021

The influence of adsorbed atoms concentration on the temperature coefficient of resonant frequency of the quasi-Rayleigh wave

Within the model of self-consistent connection of quasi-Rayleigh wave with adsorbed atoms, a method of constructing a new class of radiometric sensors of the temperature and concentration of adsorbed atoms on the surface acoustic waves is proposed. Based on the developed theory of the dispersion and acoustic mode width of a quasi-Rayleigh wave on the adsorbed surface of monocrystals with a Zinc blende structure, the temperature coefficient of the resonant frequency of the surface acoustic wave is calculated depending on the temperature and on the concentration of adsorbed atoms.

cond-mat.soft↗

arXiv2019

The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation

In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in $n$-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads to an increase or decrease of the critical temperature (the critical concentration of adatoms), at which the formation of self-organized nanostructure is possible. It is shown that in strongly alloyed $n$-GaAs semiconductor, an increase of the electric field strength leads to a monotonous change (decrease or increase depending on the direction of the electric field) of the period of self-organized surface nanostructures of adatoms.

cond-mat.mes-hall↗

arXiv2018

The theory of electron states on the dynamically deformed adsorbed surface of a solid

Dispersion relations for the spectra of surface electron states on a dynamically deformed adsorbed surface of a monocrystal with the Zinc blende structure are received. It is established that the dependences of the band gap width and of the concentration of electrons on the concentration of adatoms ${{N}_{0\text{d}}}$ upon the solid surface are of nonmonotonous character.

cond-mat.str-el↗

arXiv2017

Magnetoresistance based determination of basic parameters of minority charge carriers in solid matter

Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the phenomenological two-band model. The criterion of the application of this model has been found. As examples of these equations usage the conductor, semiconductor and superconductor have been introduced. From the obtained temperature dependences of the aforementioned values in superconductor, a supposition of a deciding role of minority charge carriers in the emergence of superconductivity state has been made.

cond-mat.mtrl-sci↗

arXiv2016

Interaction between a surface acoustic wave and adsorbed atoms

Within nonlocal elastic interaction between an adsorbed atom and matrix atoms and in consideration of the mirror image forces, a dispersion law of elastic surface acoustic waves is found to the long-wavelength approximation depending on the concentration of adsorbed atoms and the deformation potential of the adatom. The energy width of the surface acoustic mode is calculated depending on the concentration of adsorbed atoms.

cond-mat.mes-hall↗

arXiv2015

Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation

The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on ${n}$-GaAs surface under the action of laser irradiation are investigated. The offered model permits to choose optimal technological parameters (temperature, doping degree, intensity of laser irradiation) for the formation of the surface periodic defect-deformation structures under the action of laser irradiation.

cond-mat.mes-hall↗

arXiv2015

Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model

The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Within the framework of this model, the profile of spatial-temporal distribution of vacancies (interstitial atoms) in the stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs is calculated. It is shown that in the case of a stationary state ($t > 5τ_d^{(2)}$), the concentration of vacancies in the inhomogeneously compressed interlayer is smaller relative to the initial average value $N_{d0}^{(2)}$ by 16%

cond-mat.mes-hall↗

arXiv2014

Non-linear model of impurity diffusion in nanoporous materials upon ultrasonic treatment

Non-linear theory of diffusion of impurities in porous materials upon ultrasonic treatment is described. It is shown that at a defined value of deformation amplitude, an average concentration of vacancies and temperature as a result of the effect of ultrasound possibly leads to the formation of nanoclusters of vacancies and to their periodic educations in porous materials. It is shown that at a temperature smaller than some critical value, a significant growth of a diffusion coefficient is observed in porous materials.

cond-mat.mes-hall↗