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arXiv · 1506.04884

Normal metal tunnel junction-based superconducting quantum interference proximity transistor: the N-SQUIPT

S. D'Ambrosio·M. Meissner·C. Blanc·A. Ronzani·F. Giazotto
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Abstract

We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the proximized metal nanowire and the N probe allows us to observe the full modulation of the wire density of states around zero voltage and current \textit{via} the application of an external magnetic field. This results into a drastic suppression of power dissipation which can be as low as a few $\sim 10^{-17}$ W. In this context the interferometer allows an improvement of up to four orders of magnitude with respect to earlier SQUIPT designs, and makes it ideal for extra-low power cryogenic applications. In addition, the N-SQUIPT has been recently predicted to be the enabling candidate for the implementation of coherent caloritronic devices based on proximity effect.

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S. D'Ambrosio, M. Meissner, C. Blanc, A. Ronzani, F. Giazotto. 2015-06-16. Normal metal tunnel junction-based superconducting quantum interference proximity transistor: the N-SQUIPT. https://doi.org/10.1063/1.4930934

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