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arXiv · 1506.07340

Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K

Yosuke Goto·Joe Kajitani·Yoshikazu Mizuguchi·Yoichi Kamihara·Masanori Matoba
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Abstract

We demonstrate the electrical and thermal transport of layered bismuth-based sulfide EuBiS2F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to those of F-doped LaBiS2O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS2F, which is attributed to heavier atomic mass of Eu ions.

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Yosuke Goto, Joe Kajitani, Yoshikazu Mizuguchi, Yoichi Kamihara, Masanori Matoba. 2015-06-24. Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K. https://doi.org/10.7566/jpsj.84.085003

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