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arXiv · 1507.00105

Electronic structure of tungsten-doped vanadium dioxide

Jamie M. Booth·Daniel W. Drumm·Phil S. Casey·Jackson S. Smith·Salvy P. Russo
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Abstract

A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change the band structure, it is unclear how doped VO$_{2}$ retains its insulating character observed in experiments. While strong correlations may be responsible for maintaining a gap, theoretical evidence for this has been very difficult to obtain due to the complexity of the many-body problem involved. In this work we use GW calculations modified to include strong local $\textbf{k}$-space interactions to investigate the changes in band structure from tungsten doping. We find that the combination of carrier doping and the experimentally observed structural defects introduced by inclusion of tungsten are consistent with a change from band-like to Mott-insulating behavior.

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Jamie M. Booth, Daniel W. Drumm, Phil S. Casey, Jackson S. Smith, Salvy P. Russo. 2015-07-01. Electronic structure of tungsten-doped vanadium dioxide. https://arxiv.org/abs/1507.00105

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