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Jamie M. Booth

Publications and source records attributed to Jamie M. Booth.

8 recordsLinked to original sources

Accurate calculation of excitonic signatures in the absorption spectrum of BiSBr using semiconductor Bloch equations

In order to realize the significant potential of optical materials such as metal halides, computational techniques which give accurate optical properties are needed, which can work hand-in-hand with experiments to generate high efficiency devices. In this work a computationally efficient technique based on semiconductor Bloch equations (SBEs) is developed and applied to the material BiSBr. This approach gives excellent agreement with the experimental optical gap, and also agrees closely with the excitonic stabilisation energy and the absorption spectrum computed using the far more computationally demanding \textit{ab initio} Bethe-Salpeter approach. The SBE method is a good candidate for theoretical spectroscopy on large- or low dimensional systems which are too computationally expensive for an \textit{ab initio} treatment.

cond-mat.mtrl-sci

An SU(3) Yang-Mills Structure for Electron-Phonon Interactions Resulting from Strong Electron Correlations in 2D hexagonal lattices

Concise and powerful mathematical descriptions of the interplay of spin and charge degrees of degrees of freedom with crystal lattice fluctuations are of extreme importance in materials science. Such descriptions allow structured approaches to optimizing material efficiencies resulting in considerable resource savings and higher performance devices. In this work, by re-imagining the the Gell-Mann matrices as 3$\times$3 linear transformations acting on a column vector of position states, an SU(3) theory of the interplay between lattice fluctuations and strong electron correlations in 2-dimensional hexagonal materials such as graphene is formulated.

cond-mat.str-el

Superconductivity From Confinement of Singlets in Metal Oxides

The Yang-Mills description of phonons and the consequent structure of electron liquids in strongly anharmonic crystals such as metal oxides is shown to yield an attractive electron-phonon interaction, and thus an instability towards the formation of bound states, which can condense to form a superconductor. This mechanism differs significantly from the pairing mechanism of conventional superconductivity: the ground state from which superconductivity emerges is a many-body state of paired electrons and holes which is not amenable to a quasiparticle description, and whose properties are similar to those seen in the Cuprate high temperature superconductors. Confinement arises because the electron liquid structure acts as a source for Yang-Mills bosons, and not the traditional longitudinal density waves of BCS pairing.

cond-mat.supr-con

A Pure Yang-Mills Description of Anharmonic Phonons

It is shown that a unitary theory of interacting phonons with orthogonal polarization vectors can be described by a pure SU(2) Yang-Mills theory. The three orthogonal modes: the two transverse and one longitudinal mode for each value of the momentum must be dotted into the SU(2) generators for interactions to occur in a conveniently unitary form. Without this the commutation relations and the antisymmetry of the Field Strength Tensors results in all scattering vertices cancelling. This suggests that the electron states in strongly anharmonic crystals, which are the phonon source terms, may be non-trivial and consist of a many-body structure which is not describable in terms of single quasiparticles.

cond-mat.str-el

Yang-Mills Structure for Electron-Phonon Interactions

This work presents a method of grouping the electron spinors and the acoustic phonon modes of polar crystals such as metal oxides into an SU(2) gauge theory. The gauge charge is the electron spin, which is assumed to couple to the transverse acoustic phonons on the basis of spin ordering phenomena in crystals such as V$_{2}$O$_{3}$ and VO$_{2}$, while the longitudinal mode is neutral. A generalization the Peierls mechanism is presented based on the discrete gauge invariance of crystals and the corresponding Ward-Takahashi identity. The introduction of a band index violates the Ward-Takahashi identity for interband transitions resulting in a longitudinal component appearing in the upper phonon band. Thus both the spinors and the vector bosons acquire mass and a crystal with an electronic band gap and optical phonon modes results. In the limit that the coupling of bosons charged under the SU(2) gauge group goes to zero, breaking the electron U(1) symmetry recovers the BCS mechanism. In the limit that the neutral boson decouples, a Cooper instability mediated by spin-wave exchange results from symmetry breaking, i.e. unconventional superconductivity mediated by magnetic interactions.

cond-mat.str-el

Electronic structure of tungsten-doped vanadium dioxide

A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change the band structure, it is unclear how doped VO$_{2}$ retains its insulating character observed in experiments. While strong correlations may be responsible for maintaining a gap, theoretical evidence for this has been very difficult to obtain due to the complexity of the many-body problem involved. In this work we use GW calculations modified to include strong local $\textbf{k}$-space interactions to investigate the changes in band structure from tungsten doping. We find that the combination of carrier doping and the experimentally observed structural defects introduced by inclusion of tungsten are consistent with a change from band-like to Mott-insulating behavior.

cond-mat.str-el

An Ab Initio Description of the Mott Metal-Insulator Transition of M$_{2}$ Vanadium Dioxide

Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated. Similarly to the M$_{1}$ structure, the Peierls pairing of the M$_{2}$ structure results in bonding-antibonding splitting which stabilizes states in which the majority of the charge density resides on the Peierls chain. This is insufficient to drop all of the bonding states into the lower Hubbard band however. An antiferroelectric distortion on the neighboring vanadium chain is required to reduce the repulsion felt by the Peierls bonding states by increasing the distances between the vanadium and apical oxygen atoms, lowering the potential overlap thus reducing the charge density accumulation and thereby the electronic repulsion. The antibonding states are simultaneously pushed into the upper Hubbard band. The data indicate that sufficiently modified GW calculations are able to describe the interplay of the atomic and electronic structures occurring in Mott metal-insulator transitions.

cond-mat.str-el

Hubbard Physics in the PAW GW Approximation

It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero wavevector in Projector-Augmented Wave GW calculations for systems without significant nesting. This modification, when applied to the Mott insulator CuO, results in the opening of the Mott gap by the splitting of states at the Fermi level into upper and lower Hubbard bands, and exhibits a giant transfer of spectral weight upon electron doping. The method is also employed to clearly illustrate that the M$_{1}$ and M$_{2}$ forms of vanadium dioxide are fundamentally different types of insulator. Standard GW calculations are sufficient to open a gap in M$_{1}$ VO$_{2}$, which arise from the Peierls pairings filling the valence band, creating homopolar bonds. The valence band wavefunctions are stabilized with respect to the conduction band, reducing polarizability and pushing the conduction band eigenvalues to higher energy. The M$_{2}$ structure however opens a gap from strong on-site interactions; it is a Mott insulator.

cond-mat.str-el