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arXiv · 1507.04066

Electronic transport in Si:P delta-doped wires

J. S. Smith·D. W. Drumm·A. Budi·J. A. Vaitkus·J. H. Cole·S. P. Russo
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Abstract

Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a delta-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of delta-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of delta-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a delta-doped wire, which we find to be at least 4.6 nm.

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J. S. Smith, D. W. Drumm, A. Budi, J. A. Vaitkus, J. H. Cole, S. P. Russo. 2015-07-15. Electronic transport in Si:P delta-doped wires. https://doi.org/10.1103/physrevb.92.235420

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