arXiv subjects

J. S. Smith

Publications and source records attributed to J. S. Smith.

12 recordsLinked to original sources

arXiv2024

The influence of pinholes and weak-points in aluminium-oxide Josephson junctions

Josephson junctions are the key components used in superconducting qubits for quantum computing. The advancement of quantum computing is limited by a lack of stability and reproducibility of qubits which ultimately originates in the amorphous tunnel barrier of the Josephson junctions and other material imperfections. Pinholes in the junction have been suggested as one of the possible contributors to these instabilities, but evidence of their existence and the effect they might have on transport is unclear. We use molecular dynamics to create three-dimensional atomistic models to describe Al-AlOx-Al tunnel junctions, showing that pinholes form when oxidation of the barrier is incomplete. Following this we use the atomistic model and simulate the electronic transport properties for tunnel junctions with different barrier thicknesses using the non-equilibrium Green's function formalism. We observe that pinholes may contribute to excess quasiparticle current flow in Al-AlOx-Al tunnel junctions with thinner barriers, and in thicker barriers we observe weak-points which facilitate leakage currents even when the oxide is continuous. We find that the disordered nature of the amorphous barrier results in significant variations in the transport properties. Additionally, we determine the current-phase relationship for our atomistic structures, confirming that devices with pinholes and weak-points cause a deviation from the ideal sinusoidal Josephson relationship.

cond-mat.mes-hall↗

arXiv2021

Microscopic quantum point contact formation as the electromigration mechanism in granular superconductor nanowires

Granular aluminium is a high kinetic inductance thin film superconductor which, when formed into nanowires can undergo an intrinsic electromigration process. We use a combination of experimental and computational approaches to investigate the role of grain morphology and distribution in granular aluminium thin films, when formed into nanowire constrictions. Treating the granular aluminium film as a network of randomly distributed resistors with parameters motivated by the film microstructure allows us to model the electrical characteristics of the nanowires. This model provides estimates of the dependence of sheet resistance on grain size and distribution, and the resulting device to device variation for superconducting nanowires. By fabricating a series of different length nanowires, we study the electromigration process as a function of applied current, and then compare directly to the results of our computational model. In doing so we show that the electromigration is driven by the formation of quantum point contacts between metallic aluminium grains.

cond-mat.supr-con↗

arXiv2021

Aharonov-Bohm interference as a probe of Majorana fermions

Majorana fermions act as their own antiparticle, and they have long been thought to be confined to the realm of pure theory. However, interest in them has recently resurfaced, as it was realized through the work of Kitaev that some experimentally accessible condensed matter systems can host these exotic excitations as bound states on the boundaries of 1D chains, and that their topological and non-abelian nature holds promise for quantum computation. Unambiguously detecting the experimental signatures of Majorana bound states has turned out to be challenging, as many other phenomena lead to similar experimental behaviour. Here, we computationally study a ring comprised of two Kitaev model chains with tunnel coupling between them, where an applied magnetic field allows for Aharonov-Bohm interference in transport through the resulting ring structure. We use a non-equilibrium Green's function technique to analyse the transport properties of the ring in both the presence and absence of Majorana zero modes. Further, we show that these results are robust against weak disorder in the presence of an applied magnetic field. This computational model suggests another signature for the presence of these topologically protected bound states can be found in the magnetic field dependence of devices with loop geometries.

cond-mat.mes-hall↗

arXiv2020

NanoNET: an extendable Python framework for semi-empirical tight-binding models

We present a novel open-source Python framework called NanoNET (Nanoscale Non-equilibrium Electron Transport) for modelling electronic structure and transport. Our method is based on the tight-binding method and non-equilibrium Green's function theory. The core functionality of the framework is providing facilities for efficient construction of tight-binding Hamiltonian matrices from a list of atomic coordinates and a lookup table of the two-center integrals in dense, sparse, or block-tridiagonal forms. The framework implements a method based on $kd$-tree nearest-neighbour search and is applicable to isolated atomic clusters and periodic structures. A set of subroutines for detecting the block-tridiagonal structure of a Hamiltonian matrix and splitting it into series of diagonal and off-diagonal blocks is based on a new greedy algorithm with recursion. Additionally the developed software is equipped with a set of programs for computing complex band structure, self-energies of elastic scattering processes, and Green's functions. Examples of usage and capabilities of the computational framework are illustrated by computing the band structure and transport properties of a silicon nanowire as well as the band structure of bulk bismuth.

physics.comp-ph↗

arXiv2020

Pressure-induced suppression of ferromagnetism in the itinerant ferromagnet LaCrSb$_3$

We have performed an extensive pressure-dependent structural, spectroscopic, and electrical transport study of LaCrSb$_3$. The ferromagnetic phase (T$_C$ = 120 K at p = 0 GPa) is fully suppressed by p = 26.5 GPa and the Cr-moment decreases steadily with increasing pressure. The unit cell volume decreases smoothly up to p = 55 GPa. We find that the bulk modulus and suppression of the magnetism are in good agreement with theoretical predictions, but the Cr-moment decreases smoothly with pressure, in contrast to steplike drops predicted by theory. The ferromagnetic ordering temperature appears to be driven by the Cr-moment.

cond-mat.str-el↗

arXiv2020

Simulating the fabrication of aluminium oxide tunnel junctions

Aluminium oxide (AlO$_\mathrm{x}$) tunnel junctions are important components in a range of nanoelectric devices including superconducting qubits where they can be used as Josephson junctions. While many improvements in the reproducibility and reliability of qubits have been made possible through new circuit designs, there are still knowledge gaps in the relevant materials science. A better understanding of how fabrication conditions affect the density, uniformity, and elemental composition of the oxide barrier may lead to the development of lower noise and more reliable nanoelectronics and quantum computers. In this paper we use molecular dynamics to develop models of Al-AlO$_\mathrm{x}$-Al junctions by iteratively growing the structures with sequential calculations. With this approach we can see how the surface oxide grows and changes during the oxidation simulation. Dynamic processes such as the evolution of a charge gradient across the oxide, the formation of holes in the oxide layer, and changes between amorphous and semi-crystalline phases are observed. Our results are widely in agreement with previous work including reported oxide densities, self-limiting of the oxidation, and increased crystallinity as the simulation temperature is raised. The encapsulation of the oxide with metal evaporation is also studied atom by atom. Low density regions at the metal-oxide interfaces are a common feature in the final junction structures which persists for different oxidation parameters, empirical potentials, and crystal orientations of the aluminium substrate.

cond-mat.mes-hall↗

arXiv2020

Valence instability across magnetostructural transition in USb$_2$

We have performed pressure dependent X-ray diffraction and resonant X-ray emission spectroscopy experiments on USb$_2$ to further characterize the AFM-FM transition occurring near 8 GPa. We have found the magnetic transition coincides with a tetragonal to orthorhombic transition resulting in a 17% volume collapse as well as a transient $\textit{f}$-occupation enhancement. Compared to UAs$_2$ and UAsS, USb$_2$ shows a reduced bulk modulus and transition pressure and an increased volume collapse at the structural transition. Except for an enhancement across the transition region, the $\textit{f}$-occupancy decreases steadily from 1.96 to 1.75.

cond-mat.str-el↗

arXiv2019

Does the boson peak survive in an ultrathin oxide glass?

Bulk glasses exhibit extra vibrational modes at low energies, known as the boson peak. The microscopic dynamics in nanoscale alumina impact the performance of qubits and other superconducting devices, however the existence of the boson peak in these glasses has not been previously measured. Here we report neutron spectroscopy on Al/Al$_2$O$_{3-x}$ nanoparticles consisting of spherical metallic cores from 20 to 1000 nm surrounded by a 3.5 nm thick alumina glass. An intense low-energy peak is observed at $ω_{BP}$ = 2.8 $\pm$ 0.6 meV for highly oxidised particles, concurrent with an excess in the density of states. The intensity of the peak scales inversely with particle size and oxide fraction indicating a surface origin, and is red-shifted by 3 meV with respect to the van-Hove singularity of $γ$-phase Al$_2$O$_{3-x}$ nanocrystals. Molecular dynamics simulations of $α$-Al$_2$O$_{3-x}$, $γ$-Al$_2$O$_{3-x}$ and a-Al$_2$O$_{3-x}$ show that the observed boson peak is a signature of the ultrathin glass surface, and the frequency is softened compared to that of the hypothetical bulk glass.

cond-mat.mtrl-sci↗

arXiv2019

The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions

Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit parameters in these junctions are affected by the uniformity, morphology, and composition of the oxide barriers. To improve these circuits the effect of the atomic structure on the electrical response of aluminium oxide barriers must be understood. We create three-dimensional atomistic models of aluminium oxide tunnel junctions and simulate their electronic transport properties with the non-equilibrium Green's function formalism. Increasing the oxide density is found to produce an exponential increase in the junction resistance. In highly oxygen-deficient junctions we observe metallic channels which decrease the resistance significantly. Computing the charge and current density within the junction shows how variation in the local potential landscape can create channels which dominate conduction. An atomistic approach provides a better understanding of these transport processes and guides the design of junctions for nanoelectronics applications.

cond-mat.mes-hall↗

arXiv2018

Modification of structural disorder by hydrostatic-pressure in superconducting YBa$_{2}$Cu$_{3}$O$_{6.73}$ cuprate

Compelling efforts to improve the critical temperature ($T_{c}$) of superconductors have been made through high-pressure application. Understanding the underlying mechanism behind such improvements is critically important, however, much remains unclear. Here we studied ortho-III YBa$_{2}$Cu$_{3}$O$_{6.73}$ (YBCO) using x-ray scattering under hydrostatic-pressure (HP) up to ~6.0 GPa. We found the reinforced oxygen order (OO) of YBCO under HP, revealing an oxygen rearrangement in the Cu-O layer, which evidently shows the charge transfer phenomenon between the CuO$_{2}$ plane and Cu-O layer. Concurrently, we also observed no disorder-pinned charge density wave (CDW) signature in CuO$_{2}$ plane under HP. This indicates that the oxygen rearrangement modifies the quenched disorder state in the CuO$_{2}$ plane. Using these results, we appropriately explain why pressure-condition can achieve higher $T_{c}$ compared with the optimal $T_{c}$ under ambient pressure in YBa$_{2}$Cu$_{3}$O$_{6+x}$. As an implication of these results, finally, we have discussed that the change in disorder could make it easier for YBa$_{2}$Cu$_{3}$O$_{6+x}$ to undergo a transition to the nematic order under an external magnetic field.

cond-mat.supr-con↗

arXiv2016

Ab initio calculation of energy levels for phosphorus donors in silicon

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electron's ground state is found to have a form that is similar to an atomic s orbital, with an effective Bohr radius of 1.8 nm. The corresponding binding energy of this state is found to be 41 meV, which is in good agreement with the currently accepted value of 45.59 meV. We also calculate the energies of the excited 1s(T) and 1s(E) states, finding them to be 32 and 31 meV respectively. These results constitute the first ab initio confirmation of the s manifold energy levels for phosphorus donors in silicon.

cond-mat.mes-hall↗

arXiv2015

Electronic transport in Si:P delta-doped wires

Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a delta-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of delta-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of delta-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a delta-doped wire, which we find to be at least 4.6 nm.

cond-mat.mes-hall↗