arXiv · 1507.05740
Implementation and verification of different ECC mitigation designs for BRAMs in flash-based FPGAs
Abstract
Embedded RAM blocks (BRAMs) in field programmable gate arrays (FPGAs) are susceptible to single event effects (SEEs) induced by environmental factors such as cosmic rays, heavy ions, alpha particles and so on. As technology scales, the issue will be more serious. In order to tackle this issue, two different error correcting codes (ECCs), the shortened Hamming codes and shortened BCH codes, are investigated in this paper. The concrete design methods of the codes are presented. Also, the codes are both implemented in flash-based FPGAs. Finally, the synthesis report and simulation results are presented in the paper. Moreover, the heavy-ion experiments are performed, the experimental results indicate that the error cross-section using the shortened Hamming codes can be reduced by two orders of magnitude compared with the device without mitigation, and no errors are discovered in the experiments for the device using the shortened BCH codes.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Zhenlei Yang, Xiaohui Wang, Zhangang Zhang, Jie Liu, Hong Su. 2015-07-21. Implementation and verification of different ECC mitigation designs for BRAMs in flash-based FPGAs. https://doi.org/10.1088/1674-1137%2F40%2F4%2F046103
Cite the original work for its findings. Save a collection to share your selection of sources.